We present a detailed study of room-temperature current-voltage characteristics of Al- Al2 O3 -Ag junctions in which the Al electrode was treated by photolithography processing and chemical etching prior to the Al2 O3 layer growth. The I-V curves exhibit polarity-dependent irreversible conductance changes and regions of negative differential resistance. These phenomena take place only if the bias voltage exceeds 0.8 V. We discuss a qualitative mechanism for such behavior based on charge accumulation in traps present in the barrier, due to the chemical treatment.
|Journal||Journal of Applied Physics|
|State||Published - 2005|
Bibliographical noteFunding Information:
This research was supported by the Israeli Science Foundation (Grant No. 326/02-3).