The effect of lithography processing on the I-V characteristics of Al- Al 2 O 3-Ag junctions

A. Kreimer; A. Frydman

doi:10.1063/1.1931035

The effect of lithography processing on the I-V characteristics of Al- Al ₂ O ₃-Ag junctions

A. Kreimer, A. Frydman

Department of Physics

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1 Scopus citations

Abstract

We present a detailed study of room-temperature current-voltage characteristics of Al- Al2 O3 -Ag junctions in which the Al electrode was treated by photolithography processing and chemical etching prior to the Al2 O3 layer growth. The I-V curves exhibit polarity-dependent irreversible conductance changes and regions of negative differential resistance. These phenomena take place only if the bias voltage exceeds 0.8 V. We discuss a qualitative mechanism for such behavior based on charge accumulation in traps present in the barrier, due to the chemical treatment.

Original language	English
Article number	124502
Journal	Journal of Applied Physics
Volume	97
Issue number	12
DOIs	https://doi.org/10.1063/1.1931035
State	Published - 2005

Bibliographical note

Funding Information:
This research was supported by the Israeli Science Foundation (Grant No. 326/02-3).

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The effect of lithography processing on the I-V characteristics of Al- Al ₂ O ₃-Ag junctions

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