The density of localised states relevant to different properties of inhomogeneous amorphous semiconductors

V. Halpern

doi:10.1016/0022-3093(85)90673-8

The density of localised states relevant to different properties of inhomogeneous amorphous semiconductors

V. Halpern

Department of Physics - at Bar-Ilan University

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

The results of different experimental techniques for measuring the density of localised states in amorphous semiconductors are often found to differ quantitatively, and sometimes even qualitatively. One possible reason for these differences is that the material is inhomogeneous, and the inhomogeneities have different effects on the results of different types of measurement. The effects of two common types of inhomogeneity on the results of various types of experiments is discussed.

Original language	English
Pages (from-to)	351-354
Number of pages	4
Journal	Journal of Non-Crystalline Solids
Volume	77-78
Issue number	PART 1
DOIs	https://doi.org/10.1016/0022-3093(85)90673-8
State	Published - 2 Dec 1985

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10.1016/0022-3093(85)90673-8

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abstract = "The results of different experimental techniques for measuring the density of localised states in amorphous semiconductors are often found to differ quantitatively, and sometimes even qualitatively. One possible reason for these differences is that the material is inhomogeneous, and the inhomogeneities have different effects on the results of different types of measurement. The effects of two common types of inhomogeneity on the results of various types of experiments is discussed.",

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AB - The results of different experimental techniques for measuring the density of localised states in amorphous semiconductors are often found to differ quantitatively, and sometimes even qualitatively. One possible reason for these differences is that the material is inhomogeneous, and the inhomogeneities have different effects on the results of different types of measurement. The effects of two common types of inhomogeneity on the results of various types of experiments is discussed.

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The density of localised states relevant to different properties of inhomogeneous amorphous semiconductors

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