The density of localised states relevant to different properties of inhomogeneous amorphous semiconductors

V. Halpern

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

The results of different experimental techniques for measuring the density of localised states in amorphous semiconductors are often found to differ quantitatively, and sometimes even qualitatively. One possible reason for these differences is that the material is inhomogeneous, and the inhomogeneities have different effects on the results of different types of measurement. The effects of two common types of inhomogeneity on the results of various types of experiments is discussed.

Original languageEnglish
Pages (from-to)351-354
Number of pages4
JournalJournal of Non-Crystalline Solids
Volume77-78
Issue numberPART 1
DOIs
StatePublished - 2 Dec 1985

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