The decay rate of transient photocurrents in semiconductors

V. Halpern

Research output: Contribution to journalLetterpeer-review

5 Scopus citations


In many semiconductors, including even some samples of amorphous hydrogenated silicon, the transient photocurrent observed in time-of-flight measurements does not show anomalous dispersion, but rather is approximately constant up to a well-defined transit time tT, after which it tends to decay exponentially with time. Most analyses of the experimental results consider only the transit time and its dependence on temperature, electric field and sample thickness. We show that useful extra information can readily be obtained from the rate of decay of the photocurrent at times longer than tT, and from the temperature dependence of this decay rate.

Original languageEnglish
Pages (from-to)75-79
Number of pages5
JournalPhilosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties
Issue number4
StatePublished - Oct 1985


Dive into the research topics of 'The decay rate of transient photocurrents in semiconductors'. Together they form a unique fingerprint.

Cite this