TY - JOUR
T1 - The decay rate of transient photocurrents in semiconductors
AU - Halpern, V.
PY - 1985/10
Y1 - 1985/10
N2 - In many semiconductors, including even some samples of amorphous hydrogenated silicon, the transient photocurrent observed in time-of-flight measurements does not show anomalous dispersion, but rather is approximately constant up to a well-defined transit time tT, after which it tends to decay exponentially with time. Most analyses of the experimental results consider only the transit time and its dependence on temperature, electric field and sample thickness. We show that useful extra information can readily be obtained from the rate of decay of the photocurrent at times longer than tT, and from the temperature dependence of this decay rate.
AB - In many semiconductors, including even some samples of amorphous hydrogenated silicon, the transient photocurrent observed in time-of-flight measurements does not show anomalous dispersion, but rather is approximately constant up to a well-defined transit time tT, after which it tends to decay exponentially with time. Most analyses of the experimental results consider only the transit time and its dependence on temperature, electric field and sample thickness. We show that useful extra information can readily be obtained from the rate of decay of the photocurrent at times longer than tT, and from the temperature dependence of this decay rate.
UR - http://www.scopus.com/inward/record.url?scp=0022144917&partnerID=8YFLogxK
U2 - 10.1080/13642818508238928
DO - 10.1080/13642818508238928
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AN - SCOPUS:0022144917
SN - 1364-2812
VL - 52
SP - 75
EP - 79
JO - Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties
JF - Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties
IS - 4
ER -