Abstract
It is shown that the role of valley degeneracy is essential in enhancing the Hartree interaction terms over the exchange terms and thereby causing different critical transport properties in doped semiconductors. We predict, following the arguments of Kaveh, that for uncompensated many-valley semiconductors, the critical conductivity exponent is ν= 1/2 and the critical exponent for the dielectric constant is 2ν = 1.
| Original language | English |
|---|---|
| Pages (from-to) | 1-8 |
| Number of pages | 8 |
| Journal | Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties |
| Volume | 55 |
| Issue number | 1 |
| DOIs | |
| State | Published - Jan 1987 |
Bibliographical note
Funding Information:ACKNOWLEDGMENTS We are grateful to M. Pepper for discussions on this subject. Moshe Kaveh acknowledges an SERC Research Fellowship.
Funding
ACKNOWLEDGMENTS We are grateful to M. Pepper for discussions on this subject. Moshe Kaveh acknowledges an SERC Research Fellowship.
| Funders | Funder number |
|---|---|
| Connecticut State Emergency Response Commission |