The critical transport properties of doped semiconductors

M. Kaveh, N. F. Mott

Research output: Contribution to journalArticlepeer-review


It is shown that the role of valley degeneracy is essential in enhancing the Hartree interaction terms over the exchange terms and thereby causing different critical transport properties in doped semiconductors. We predict, following the arguments of Kaveh, that for uncompensated many-valley semiconductors, the critical conductivity exponent is ν= 1/2 and the critical exponent for the dielectric constant is 2ν = 1.

Original languageEnglish
Pages (from-to)1-8
Number of pages8
JournalPhilosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties
Issue number1
StatePublished - Jan 1987

Bibliographical note

Funding Information:
ACKNOWLEDGMENTS We are grateful to M. Pepper for discussions on this subject. Moshe Kaveh acknowledges an SERC Research Fellowship.


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