TY - JOUR
T1 - Ternary chalcogenide-based photoelectrochemical cells. 6. Is there a thermodynamic explanation for the output stability of CuInS2 and CuInSe2 photoanodes?
AU - Cahen, David
AU - Mirovsky, Yehudith
PY - 1985
Y1 - 1985
N2 - Using recently determined thermodynamic data for CuInS2 and CuInSe2, we estimated the Gibbs free energy changes for several decomposition and exchange reactions for these semiconductors in aqueous polysulfide and aqueous polyiodide, and, where possible, calculated their corresponding electrode potentials. Exchange reactions for In2O3, believed to be the native oxide on these semiconductors, are included, as well as chemical conversion reactions for their preparation from the corresponding indium sesquichalcogenides. With the aid of measured flat-band potentials, the band edges of the semiconductors (or semiconductor/surface oxide systems) are determined on the electrochemical scale and the quasi-Fermi levels are estimated from literature data. When these are combined with the calculated decomposition potentials and the measured redox potentials, (in)stability electron energy diagrams that are strictly valid only near open circuit are constructed. On the basis of these the absence of Se/S exchange on n-CuInSe2 in polysulfide, the protective function of an indium oxide surface layer on CuInSe2 in polyiodide, the stabilizing effect, on CuInSe2, of adding copper ions to polyiodide solutions, and the stability of CuInSe2 against reductive decomposition can be understood. Also, the greater likelihood of In2X3 (X = S or Se) formation (in polysulfide) on CuInS2 than on CuInSe2, the possibility of CuInSe2 formation on the surface of In2Se3, immersed in Cu-containing solutions, and the photoanodic decomposition of n-CuInSe2 under illumination in acetonitrile can be rationalized. The data do not explain the difference between CdSe and CuInSe2, with respect to chemical Se/S exchange, the absence of InI3 formation in In2O3 in polyiodide, the absence of photoanodic decomposition of CuInX2 into copper and indium sulfides in polysulfide, and the lack of Cu2Se formation from photoanodic decomposition of CuInSe2 in polyiodide. In these latter cases kinetic factors, which may be related to the large number of reactants and charge carriers that are involved in some of the suggested decomposition reactions, appear to be dominant. Because of the possibility of very large deviations from steady state and the occurrence, at least initially, of products in states very different from their standard state, the free energy changes for virtually all decomposition reactions are expected to be shifted sufficiently to make these and other semiconductors thermodynamically unstable toward initial decomposition.
AB - Using recently determined thermodynamic data for CuInS2 and CuInSe2, we estimated the Gibbs free energy changes for several decomposition and exchange reactions for these semiconductors in aqueous polysulfide and aqueous polyiodide, and, where possible, calculated their corresponding electrode potentials. Exchange reactions for In2O3, believed to be the native oxide on these semiconductors, are included, as well as chemical conversion reactions for their preparation from the corresponding indium sesquichalcogenides. With the aid of measured flat-band potentials, the band edges of the semiconductors (or semiconductor/surface oxide systems) are determined on the electrochemical scale and the quasi-Fermi levels are estimated from literature data. When these are combined with the calculated decomposition potentials and the measured redox potentials, (in)stability electron energy diagrams that are strictly valid only near open circuit are constructed. On the basis of these the absence of Se/S exchange on n-CuInSe2 in polysulfide, the protective function of an indium oxide surface layer on CuInSe2 in polyiodide, the stabilizing effect, on CuInSe2, of adding copper ions to polyiodide solutions, and the stability of CuInSe2 against reductive decomposition can be understood. Also, the greater likelihood of In2X3 (X = S or Se) formation (in polysulfide) on CuInS2 than on CuInSe2, the possibility of CuInSe2 formation on the surface of In2Se3, immersed in Cu-containing solutions, and the photoanodic decomposition of n-CuInSe2 under illumination in acetonitrile can be rationalized. The data do not explain the difference between CdSe and CuInSe2, with respect to chemical Se/S exchange, the absence of InI3 formation in In2O3 in polyiodide, the absence of photoanodic decomposition of CuInX2 into copper and indium sulfides in polysulfide, and the lack of Cu2Se formation from photoanodic decomposition of CuInSe2 in polyiodide. In these latter cases kinetic factors, which may be related to the large number of reactants and charge carriers that are involved in some of the suggested decomposition reactions, appear to be dominant. Because of the possibility of very large deviations from steady state and the occurrence, at least initially, of products in states very different from their standard state, the free energy changes for virtually all decomposition reactions are expected to be shifted sufficiently to make these and other semiconductors thermodynamically unstable toward initial decomposition.
UR - http://www.scopus.com/inward/record.url?scp=0005888204&partnerID=8YFLogxK
U2 - 10.1021/j100259a023
DO - 10.1021/j100259a023
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AN - SCOPUS:0005888204
SN - 0022-3654
VL - 89
SP - 2818
EP - 2827
JO - Journal of Physical Chemistry
JF - Journal of Physical Chemistry
IS - 13
ER -