TY - JOUR
T1 - Temperature-induced smearing of the Coulomb gap
T2 - Experiment and computer simulation
AU - Shlimak, I.
AU - Kaveh, M.
AU - Ussyshkin, R.
AU - Ginodman, V.
AU - Baranovskii, S. D.
AU - Thomas, P.
AU - Vaupel, H.
AU - Van Der Heijden, R. W.
PY - 1995
Y1 - 1995
N2 - We present the first verification of the theoretically predicted effect of temperature-induced smearing of the Coulomb gap. Measurements of the variable-range-hopping conductivity (VRH) in samples of ion-implanted Si:As and computer simulation are used to study the density of states (DOS) near the Fermi level (FL) in the impurity band. The VRH is determined by the DOS integrated over some energy range that depends on temperature T and on the magnetic field B. Using the interplay between T and B we find that the DOS in the vicinity of the FL increases with increasing T.
AB - We present the first verification of the theoretically predicted effect of temperature-induced smearing of the Coulomb gap. Measurements of the variable-range-hopping conductivity (VRH) in samples of ion-implanted Si:As and computer simulation are used to study the density of states (DOS) near the Fermi level (FL) in the impurity band. The VRH is determined by the DOS integrated over some energy range that depends on temperature T and on the magnetic field B. Using the interplay between T and B we find that the DOS in the vicinity of the FL increases with increasing T.
UR - http://www.scopus.com/inward/record.url?scp=4243717054&partnerID=8YFLogxK
U2 - 10.1103/PhysRevLett.75.4764
DO - 10.1103/PhysRevLett.75.4764
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AN - SCOPUS:4243717054
SN - 0031-9007
VL - 75
SP - 4764
EP - 4767
JO - Physical Review Letters
JF - Physical Review Letters
IS - 26
ER -