Temperature-dependent barrier characteristics of swift heavy ion irradiated Au/n-Si Schottky structure

Sandeep Kumar; Y. S. Katharria; Sugam Kumar; D. Kanjilal

doi:10.1063/1.2388855

Temperature-dependent barrier characteristics of swift heavy ion irradiated Au/n-Si Schottky structure

Sandeep Kumar, Y. S. Katharria, Sugam Kumar, D. Kanjilal

Inter University Accelerator Centre India

Research output: Contribution to journal › Article › peer-review

30 Scopus citations

Abstract

The electrical behavior of Aun-Si (100) structure, irradiated with 120 MeV Ag 8+ 107, has been investigated in a wide temperature range (50-300 K). The forward bias current-voltage (I-V) and reverse bias capacitance-voltage (C-V) measurements have been used to extract the diode parameters. The variations in various parameters of the irradiated Schottky structure have been systematically studied as a function of temperature. It is found that the flatband barrier height is almost independent of the change in temperature. The ionized-donor concentration decreases while the ideality factor increases with decreasing temperatures. The behavior of Schottky parameters is explained by taking into account the role of the swift heavy ion irradiation induced defects at metal-semiconductor junction. The results are interpreted on the basis of recent models of Fermi level pinning.

Original language	English
Article number	113723
Journal	Journal of Applied Physics
Volume	100
Issue number	11
DOIs	https://doi.org/10.1063/1.2388855
State	Published - 2006
Externally published	Yes

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title = "Temperature-dependent barrier characteristics of swift heavy ion irradiated Au/n-Si Schottky structure",

abstract = "The electrical behavior of Aun-Si (100) structure, irradiated with 120 MeV Ag 8+ 107, has been investigated in a wide temperature range (50-300 K). The forward bias current-voltage (I-V) and reverse bias capacitance-voltage (C-V) measurements have been used to extract the diode parameters. The variations in various parameters of the irradiated Schottky structure have been systematically studied as a function of temperature. It is found that the flatband barrier height is almost independent of the change in temperature. The ionized-donor concentration decreases while the ideality factor increases with decreasing temperatures. The behavior of Schottky parameters is explained by taking into account the role of the swift heavy ion irradiation induced defects at metal-semiconductor junction. The results are interpreted on the basis of recent models of Fermi level pinning.",

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AU - Kumar, Sandeep

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AU - Kumar, Sugam

AU - Kanjilal, D.

PY - 2006

Y1 - 2006

N2 - The electrical behavior of Aun-Si (100) structure, irradiated with 120 MeV Ag 8+ 107, has been investigated in a wide temperature range (50-300 K). The forward bias current-voltage (I-V) and reverse bias capacitance-voltage (C-V) measurements have been used to extract the diode parameters. The variations in various parameters of the irradiated Schottky structure have been systematically studied as a function of temperature. It is found that the flatband barrier height is almost independent of the change in temperature. The ionized-donor concentration decreases while the ideality factor increases with decreasing temperatures. The behavior of Schottky parameters is explained by taking into account the role of the swift heavy ion irradiation induced defects at metal-semiconductor junction. The results are interpreted on the basis of recent models of Fermi level pinning.

AB - The electrical behavior of Aun-Si (100) structure, irradiated with 120 MeV Ag 8+ 107, has been investigated in a wide temperature range (50-300 K). The forward bias current-voltage (I-V) and reverse bias capacitance-voltage (C-V) measurements have been used to extract the diode parameters. The variations in various parameters of the irradiated Schottky structure have been systematically studied as a function of temperature. It is found that the flatband barrier height is almost independent of the change in temperature. The ionized-donor concentration decreases while the ideality factor increases with decreasing temperatures. The behavior of Schottky parameters is explained by taking into account the role of the swift heavy ion irradiation induced defects at metal-semiconductor junction. The results are interpreted on the basis of recent models of Fermi level pinning.

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Temperature-dependent barrier characteristics of swift heavy ion irradiated Au/n-Si Schottky structure

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