Temperature-dependence of barrier height of swift heavy ion irradiated Au/n-Si Schottky structure

Sandeep Kumar; Y. S. Katharria; Sugam Kumar; D. Kanjilal

doi:10.1016/j.sse.2006.09.004

Temperature-dependence of barrier height of swift heavy ion irradiated Au/n-Si Schottky structure

Sandeep Kumar, Y. S. Katharria, Sugam Kumar, D. Kanjilal

Inter University Accelerator Centre India

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

The electrical characteristics of swift heavy ion (SHI) irradiated Au/n-Si (1 0 0) structure has been investigated in a wide temperature range (50-300 K). The forward bias current-voltage (I-V) measurements have been used to extract the diode parameters as a function of temperature. The Zero-bias Schottky barrier height decreases with decreasing temperature. However, the flat-band barrier height is almost independent of the temperature. These results are interpreted using the models of Fermi level pinning. The behavior of Schottky diode parameters is explained by taking into account the role of the irradiation induced defects at Au/n-Si (1 0 0) interface.

Original language	English
Pages (from-to)	1835-1837
Number of pages	3
Journal	Solid-State Electronics
Volume	50
Issue number	11-12
DOIs	https://doi.org/10.1016/j.sse.2006.09.004
State	Published - Nov 2006
Externally published	Yes

Keywords

I-V characteristics
Schottky diodes
Temperature-dependence barrier height

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10.1016/j.sse.2006.09.004

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title = "Temperature-dependence of barrier height of swift heavy ion irradiated Au/n-Si Schottky structure",

abstract = "The electrical characteristics of swift heavy ion (SHI) irradiated Au/n-Si (1 0 0) structure has been investigated in a wide temperature range (50-300 K). The forward bias current-voltage (I-V) measurements have been used to extract the diode parameters as a function of temperature. The Zero-bias Schottky barrier height decreases with decreasing temperature. However, the flat-band barrier height is almost independent of the temperature. These results are interpreted using the models of Fermi level pinning. The behavior of Schottky diode parameters is explained by taking into account the role of the irradiation induced defects at Au/n-Si (1 0 0) interface.",

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T1 - Temperature-dependence of barrier height of swift heavy ion irradiated Au/n-Si Schottky structure

AU - Kumar, Sandeep

AU - Katharria, Y. S.

AU - Kumar, Sugam

AU - Kanjilal, D.

PY - 2006/11

Y1 - 2006/11

N2 - The electrical characteristics of swift heavy ion (SHI) irradiated Au/n-Si (1 0 0) structure has been investigated in a wide temperature range (50-300 K). The forward bias current-voltage (I-V) measurements have been used to extract the diode parameters as a function of temperature. The Zero-bias Schottky barrier height decreases with decreasing temperature. However, the flat-band barrier height is almost independent of the temperature. These results are interpreted using the models of Fermi level pinning. The behavior of Schottky diode parameters is explained by taking into account the role of the irradiation induced defects at Au/n-Si (1 0 0) interface.

AB - The electrical characteristics of swift heavy ion (SHI) irradiated Au/n-Si (1 0 0) structure has been investigated in a wide temperature range (50-300 K). The forward bias current-voltage (I-V) measurements have been used to extract the diode parameters as a function of temperature. The Zero-bias Schottky barrier height decreases with decreasing temperature. However, the flat-band barrier height is almost independent of the temperature. These results are interpreted using the models of Fermi level pinning. The behavior of Schottky diode parameters is explained by taking into account the role of the irradiation induced defects at Au/n-Si (1 0 0) interface.

KW - I-V characteristics

KW - Schottky diodes

KW - Temperature-dependence barrier height

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JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 11-12

ER -

Temperature-dependence of barrier height of swift heavy ion irradiated Au/n-Si Schottky structure

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Keywords

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