Te doped GaInAsN/GaAlAs quantum well photodetector: an unpolarized intersubband photocurrent

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Original language	American English
Title of host publication	7th International Conference of Nitride Semiconductors
State	Published - 2007

Place of conference:Las Vegas, Nevada, USA

Cite this

@inproceedings{d56fdf6eb0b9456aad53fd752a170b08,

title = "Te doped GaInAsN/GaAlAs quantum well photodetector: an unpolarized intersubband photocurrent",

author = "{Asaf Albo}, {Dan Fekete}",

note = "Place of conference:Las Vegas, Nevada, USA",

year = "2007",

language = "American English",

booktitle = "7th International Conference of Nitride Semiconductors",

}