T2SL/InP/T2SL pBp extended SWIR barriode with InGaAs/GaAsSb absorption material lattice matched to InP

In this paper we report the design, fabrication and characterization of an innovative T2SL/InP/T2SL pBp structure based on an InGaAs/GaAsSb superlattice absorption layer lattice matched to an InP substrate. The device exhibits a cutoff wavelength of 2.3 µm at room temperature and 2.2 µm at 200 K. At 200 K, a dark current density of 1.3x10^-6 A/cm² under 0.1 V bias operation was measured. At room temperature, a quantum efficiency up to 37% and a specific detectivity of 1x10¹⁰ cmHz^1/2/W were achieved at 2.2 µm. The overall performance of these pBp detectors demonstrates their potential as extended short wavelength infrared detectors.