T2SL/InP/T2SL pBp extended SWIR barriode with InGaAs/GaAsSb absorption material lattice matched to InP

I. Shafir, D. C. Elias, D. Memram, N. Sicron, M. Katz

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

In this paper we report the design, fabrication and characterization of an innovative T2SL/InP/T2SL pBp structure based on an InGaAs/GaAsSb superlattice absorption layer lattice matched to an InP substrate. The device exhibits a cutoff wavelength of 2.3 µm at room temperature and 2.2 µm at 200 K. At 200 K, a dark current density of 1.3x10-6 A/cm2 under 0.1 V bias operation was measured. At room temperature, a quantum efficiency up to 37% and a specific detectivity of 1x1010 cmHz1/2/W were achieved at 2.2 µm. The overall performance of these pBp detectors demonstrates their potential as extended short wavelength infrared detectors.

Original languageEnglish
Article number104217
JournalInfrared Physics and Technology
Volume125
DOIs
StatePublished - Sep 2022
Externally publishedYes

Bibliographical note

Publisher Copyright:
© 2022

Keywords

  • Burrier
  • Infrared
  • Photodetector
  • Superlattice

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