Abstract
In this paper we report the design, fabrication and characterization of an innovative T2SL/InP/T2SL pBp structure based on an InGaAs/GaAsSb superlattice absorption layer lattice matched to an InP substrate. The device exhibits a cutoff wavelength of 2.3 µm at room temperature and 2.2 µm at 200 K. At 200 K, a dark current density of 1.3x10-6 A/cm2 under 0.1 V bias operation was measured. At room temperature, a quantum efficiency up to 37% and a specific detectivity of 1x1010 cmHz1/2/W were achieved at 2.2 µm. The overall performance of these pBp detectors demonstrates their potential as extended short wavelength infrared detectors.
Original language | English |
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Article number | 104217 |
Journal | Infrared Physics and Technology |
Volume | 125 |
DOIs | |
State | Published - Sep 2022 |
Externally published | Yes |
Bibliographical note
Publisher Copyright:© 2022
Keywords
- Burrier
- Infrared
- Photodetector
- Superlattice