Synthesis of graded Hf-silicate thin films for alternate gate dielectric applications

K. Ramani, P. Kumar, K. Siebein, V. Craciun, R. K. Singh

Research output: Contribution to journalArticlepeer-review

5 Scopus citations


The dielectric and material properties of compositionally graded Hf-silicate films are reported. The graded Hf-silicate films were processed at ∼400°C by pulsed-laser deposition and ultraviolet-radiation-assisted oxidation technique. The relative HfSi content in the films was increased upward from the Si substrate, gradually changing the bonding from Hf-rich silicate at the top layers to Hf-poor silicate bonding and at the film-Si interface, respectively. The graded Hf-silicate films exhibited a dielectric constant of 14.7 and were found to remain amorphous after a rapid thermal anneal at 1000°C.

Original languageEnglish
Pages (from-to)H66-H68
JournalElectrochemical and Solid-State Letters
Issue number2
StatePublished - 2007
Externally publishedYes


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