Synthesis of buried SiC using an energetic ion beam

Y. S. Katharria; Sandeep Kumar; F. Singh; J. C. Pivin; D. Kanjilal

doi:10.1088/0022-3727/39/18/007

Synthesis of buried SiC using an energetic ion beam

Y. S. Katharria, Sandeep Kumar, F. Singh, J. C. Pivin, D. Kanjilal

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Abstract

Buried silicon carbide (SiC) was synthesized at room temperature using implantation of 150 keV C⁺ ions in n-type Si (100) and Si (111) substrates. The dose of implanted C⁺ was varied from 4 × 10¹⁷ to 8 × 10¹⁷ cm^-2. Post-implantation annealing at 1000° C for 30 min was carried out in inert ambience. Rutherford backscattering spectroscopy, x-ray diffraction (XRD), Fourier transform infrared (FTIR) spectroscopy and Raman spectroscopy were employed to characterize the samples. FTIR and Raman spectroscopic techniques in combination with the XRD analysis confirmed the development of the β-SiC phase in the samples. The average size of the SiC precipitates was estimated to be 9 nm from XRD analysis.

Original language	English
Article number	007
Pages (from-to)	3969-3973
Number of pages	5
Journal	Journal Physics D: Applied Physics
Volume	39
Issue number	18
DOIs	https://doi.org/10.1088/0022-3727/39/18/007
State	Published - 21 Sep 2006
Externally published	Yes

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title = "Synthesis of buried SiC using an energetic ion beam",

abstract = "Buried silicon carbide (SiC) was synthesized at room temperature using implantation of 150 keV C+ ions in n-type Si (100) and Si (111) substrates. The dose of implanted C+ was varied from 4 × 1017 to 8 × 1017 cm-2. Post-implantation annealing at 1000° C for 30 min was carried out in inert ambience. Rutherford backscattering spectroscopy, x-ray diffraction (XRD), Fourier transform infrared (FTIR) spectroscopy and Raman spectroscopy were employed to characterize the samples. FTIR and Raman spectroscopic techniques in combination with the XRD analysis confirmed the development of the β-SiC phase in the samples. The average size of the SiC precipitates was estimated to be 9 nm from XRD analysis.",

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AU - Katharria, Y. S.

AU - Kumar, Sandeep

AU - Singh, F.

AU - Pivin, J. C.

AU - Kanjilal, D.

PY - 2006/9/21

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AB - Buried silicon carbide (SiC) was synthesized at room temperature using implantation of 150 keV C+ ions in n-type Si (100) and Si (111) substrates. The dose of implanted C+ was varied from 4 × 1017 to 8 × 1017 cm-2. Post-implantation annealing at 1000° C for 30 min was carried out in inert ambience. Rutherford backscattering spectroscopy, x-ray diffraction (XRD), Fourier transform infrared (FTIR) spectroscopy and Raman spectroscopy were employed to characterize the samples. FTIR and Raman spectroscopic techniques in combination with the XRD analysis confirmed the development of the β-SiC phase in the samples. The average size of the SiC precipitates was estimated to be 9 nm from XRD analysis.

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Synthesis of buried SiC using an energetic ion beam

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