Synthesis of al doped ZnO films by sol-gel technique

S. R. Bhattacharyya, S. Majumder

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

Transparent and conducting aluminium doped ZnO (ZnO:Al) films having different Al:Zn ratio were deposited by simple solgel technique on glass substrates. The films were characterized by microstructural, optical and electrical studies. It was observed that the films were transparent but highly resistive. The films were annealed at 300°C in an (nitrogen (N2) + hydrogen (H2) - 95% + 5%) atmosphere to obtain low resistive films. While the films showed transparency of > 70% in the visible range, the resistivity of the films was of the order of 10-3 Ω cm. The optical constants of the films were studied by a modified KramersKronig model to study its variation with the change in aluminium (Al) concentration.

Original languageEnglish
Pages (from-to)111-114
Number of pages4
JournalFunctional Materials Letters
Volume3
Issue number2
DOIs
StatePublished - Jun 2010
Externally publishedYes

Keywords

  • Al doping
  • Thin films
  • ZnO
  • electrical
  • optical

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