Abstract
Two kinds of memory switching phenomena are observed in metalpolymer-metal structures based on elastic poly(dimethilsiloxane) films of thickness 3-20 μm. For high voltages (> 100 V), a conventional electrical breakdown of dielectric polymer film is observed and the low-resistance ON state is caused by the formation of a metal bridge between the electrodes due to the jet evaporation of an electrode material. The ability of this bridge to pass a current is limited by Joule heating which melts the bridge. Another intriguing phenomenon called "ultraswitching" is observed for small voltages (< 1 V), when the ON state appears and disappears occasionally being able to pass much larger current.
| Original language | English |
|---|---|
| Pages (from-to) | 443-446 |
| Number of pages | 4 |
| Journal | Solid State Communications |
| Volume | 107 |
| Issue number | 9 |
| DOIs | |
| State | Published - 24 Jul 1998 |
Bibliographical note
Funding Information:Acknowledgements-This work was supportedin part by the Israeli Ministry of Science. We thank M. Shur, M. Levinshtein and V. Kozub for fruitful discussion and the Eric and Sheila Samsom Chair of Semiconductor Technology for financial support.
Funding
Acknowledgements-This work was supportedin part by the Israeli Ministry of Science. We thank M. Shur, M. Levinshtein and V. Kozub for fruitful discussion and the Eric and Sheila Samsom Chair of Semiconductor Technology for financial support.
| Funders | Funder number |
|---|---|
| Israeli Ministry of Science |
Keywords
- A. polymers
- A. thin films
- D. electron transport