Switching phenomena in elastic polymer films

I. Shlimak, V. Martchenkov

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8 Scopus citations


Two kinds of memory switching phenomena are observed in metalpolymer-metal structures based on elastic poly(dimethilsiloxane) films of thickness 3-20 μm. For high voltages (> 100 V), a conventional electrical breakdown of dielectric polymer film is observed and the low-resistance ON state is caused by the formation of a metal bridge between the electrodes due to the jet evaporation of an electrode material. The ability of this bridge to pass a current is limited by Joule heating which melts the bridge. Another intriguing phenomenon called "ultraswitching" is observed for small voltages (< 1 V), when the ON state appears and disappears occasionally being able to pass much larger current.

Original languageEnglish
Pages (from-to)443-446
Number of pages4
JournalSolid State Communications
Issue number9
StatePublished - 24 Jul 1998

Bibliographical note

Funding Information:
Acknowledgements-This work was supportedin part by the Israeli Ministry of Science. We thank M. Shur, M. Levinshtein and V. Kozub for fruitful discussion and the Eric and Sheila Samsom Chair of Semiconductor Technology for financial support.


  • A. polymers
  • A. thin films
  • D. electron transport


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