Abstract
Spin-orbit torques emerge as a promising method for manipulating magnetic configurations of spintronic devices. Here, we show that these torques can induce a magnetization reversal via domain wall propagation which may open new ways in developing novel spintronic devices and in particular in realizing high-density multi-level magnetic memory. Our devices are bi-layer heterostructures of Ni0.8Fe0.2 on top of β-Ta patterned in the form of two or three crossing ellipses which exhibit in the crossing area shape-induced biaxial and triaxial magnetic anisotropy, respectively. We demonstrate field-free switching between discrete remanent magnetic states of the structures by spin-orbit torques induced by flowing electrical current through one of the ellipses. We note switchings induced by the coupling between the ellipses where current flowing in one ellipse triggers a reversal in a neighboring ellipse which propagates from the center outwards. Numerical tools successfully simulate the observed coupling-induced switching using experimentally extracted parameters.
Original language | English |
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Article number | 20368 |
Journal | Scientific Reports |
Volume | 9 |
Issue number | 1 |
DOIs | |
State | Published - 30 Dec 2019 |
Bibliographical note
Publisher Copyright:© 2019, The Author(s).