Swift heavy ion irradiation-induced defects and electrical characteristics of Au/n-Si Schottky structure

Sandeep Kumar; Y. S. Katharria; D. Kanjilal

doi:10.1088/0022-3727/41/10/105105

Swift heavy ion irradiation-induced defects and electrical characteristics of Au/n-Si Schottky structure

Sandeep Kumar, Y. S. Katharria, D. Kanjilal

Inter University Accelerator Centre India

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

The formation and evolution of defects induced by 100 MeV Si⁷⁺ ion irradiation in the Au/n-Si (1 0 0) Schottky barrier structure were studied and correlated with the electrical characteristics of the structure. The Schottky barrier decreases to 0.67 0.01 eV after irradiation at a fluence of 1 × 10¹¹ ions cm^-2 and remains immune to further irradiation up to a fluence of 1 × 10¹² ions cm^-2. A combination of in situ deep level transient spectroscopy and current-voltage measurements of Au/n-Si diodes demonstrates that 100 MeV silicon ion irradiation introduces a hydrogen related defect complex, which has a major influence on the Schottky barrier height and the leakage current in the irradiated structure.

Original language	English
Article number	105105
Journal	Journal Physics D: Applied Physics
Volume	41
Issue number	10
DOIs	https://doi.org/10.1088/0022-3727/41/10/105105
State	Published - 21 May 2008
Externally published	Yes

Access to Document

10.1088/0022-3727/41/10/105105

Cite this

@article{7fe314132de64112b2092e4c76ec5c13,

title = "Swift heavy ion irradiation-induced defects and electrical characteristics of Au/n-Si Schottky structure",

abstract = "The formation and evolution of defects induced by 100 MeV Si7+ ion irradiation in the Au/n-Si (1 0 0) Schottky barrier structure were studied and correlated with the electrical characteristics of the structure. The Schottky barrier decreases to 0.67 0.01 eV after irradiation at a fluence of 1 × 1011 ions cm-2 and remains immune to further irradiation up to a fluence of 1 × 1012 ions cm-2. A combination of in situ deep level transient spectroscopy and current-voltage measurements of Au/n-Si diodes demonstrates that 100 MeV silicon ion irradiation introduces a hydrogen related defect complex, which has a major influence on the Schottky barrier height and the leakage current in the irradiated structure.",

author = "Sandeep Kumar and Katharria, {Y. S.} and D. Kanjilal",

year = "2008",

month = may,

day = "21",

doi = "10.1088/0022-3727/41/10/105105",

language = "אנגלית",

volume = "41",

journal = "Journal Physics D: Applied Physics",

issn = "0022-3727",

publisher = "IOP Publishing Ltd.",

number = "10",

}

TY - JOUR

T1 - Swift heavy ion irradiation-induced defects and electrical characteristics of Au/n-Si Schottky structure

AU - Kumar, Sandeep

AU - Katharria, Y. S.

AU - Kanjilal, D.

PY - 2008/5/21

Y1 - 2008/5/21

N2 - The formation and evolution of defects induced by 100 MeV Si7+ ion irradiation in the Au/n-Si (1 0 0) Schottky barrier structure were studied and correlated with the electrical characteristics of the structure. The Schottky barrier decreases to 0.67 0.01 eV after irradiation at a fluence of 1 × 1011 ions cm-2 and remains immune to further irradiation up to a fluence of 1 × 1012 ions cm-2. A combination of in situ deep level transient spectroscopy and current-voltage measurements of Au/n-Si diodes demonstrates that 100 MeV silicon ion irradiation introduces a hydrogen related defect complex, which has a major influence on the Schottky barrier height and the leakage current in the irradiated structure.

AB - The formation and evolution of defects induced by 100 MeV Si7+ ion irradiation in the Au/n-Si (1 0 0) Schottky barrier structure were studied and correlated with the electrical characteristics of the structure. The Schottky barrier decreases to 0.67 0.01 eV after irradiation at a fluence of 1 × 1011 ions cm-2 and remains immune to further irradiation up to a fluence of 1 × 1012 ions cm-2. A combination of in situ deep level transient spectroscopy and current-voltage measurements of Au/n-Si diodes demonstrates that 100 MeV silicon ion irradiation introduces a hydrogen related defect complex, which has a major influence on the Schottky barrier height and the leakage current in the irradiated structure.

UR - http://www.scopus.com/inward/record.url?scp=43049131460&partnerID=8YFLogxK

U2 - 10.1088/0022-3727/41/10/105105

DO - 10.1088/0022-3727/41/10/105105

M3 - ???researchoutput.researchoutputtypes.contributiontojournal.article???

AN - SCOPUS:43049131460

SN - 0022-3727

VL - 41

JO - Journal Physics D: Applied Physics

JF - Journal Physics D: Applied Physics

IS - 10

M1 - 105105

ER -

Swift heavy ion irradiation-induced defects and electrical characteristics of Au/n-Si Schottky structure

Abstract

Access to Document

Other files and links

Fingerprint

Cite this