TY - JOUR
T1 - Surface structure of liquid metals and the effect of capillary waves
T2 - x-ray studies on liquid indium
AU - Tostmann, H.
AU - DiMasi, E.
AU - Pershan, P. S.
AU - Ocko, B. M.
AU - Shpyrko, O. G.
AU - Deutsch, M.
PY - 1999
Y1 - 1999
N2 - We report x-ray reflectivity (XR) and small-angle off-specular diffuse-scattering (DS) measurements from the surface of liquid indium close to its melting point of (Formula presented) From the XR measurements we extract the surface structure factor convolved with fluctuations in the height of the liquid surface. We present a model to describe DS that takes into account the surface structure factor, thermally excited capillary waves, and the experimental resolution. The experimentally determined DS follows this model with no adjustable parameters, allowing the surface structure factor to be deconvolved from the thermally excited height fluctuations. The resulting local electron-density profile displays exponentially decaying surface-induced layering similar to that previously reported for Ga and Hg. We compare the details of the local electron-density profiles of liquid In, which is a nearly free-electron metal, and liquid Ga, which is considerably more covalent and shows directional bonding in the melt. The oscillatory density profiles have comparable amplitudes in both metals, but surface layering decays over a length scale of (Formula presented) for In and (Formula presented) for Ga. Upon controlled exposure to oxygen, no oxide monolayer is formed on the liquid In surface, unlike the passivating film formed on liquid gallium.
AB - We report x-ray reflectivity (XR) and small-angle off-specular diffuse-scattering (DS) measurements from the surface of liquid indium close to its melting point of (Formula presented) From the XR measurements we extract the surface structure factor convolved with fluctuations in the height of the liquid surface. We present a model to describe DS that takes into account the surface structure factor, thermally excited capillary waves, and the experimental resolution. The experimentally determined DS follows this model with no adjustable parameters, allowing the surface structure factor to be deconvolved from the thermally excited height fluctuations. The resulting local electron-density profile displays exponentially decaying surface-induced layering similar to that previously reported for Ga and Hg. We compare the details of the local electron-density profiles of liquid In, which is a nearly free-electron metal, and liquid Ga, which is considerably more covalent and shows directional bonding in the melt. The oscillatory density profiles have comparable amplitudes in both metals, but surface layering decays over a length scale of (Formula presented) for In and (Formula presented) for Ga. Upon controlled exposure to oxygen, no oxide monolayer is formed on the liquid In surface, unlike the passivating film formed on liquid gallium.
UR - http://www.scopus.com/inward/record.url?scp=0000871579&partnerID=8YFLogxK
U2 - 10.1103/PhysRevB.59.783
DO - 10.1103/PhysRevB.59.783
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AN - SCOPUS:0000871579
SN - 1098-0121
VL - 59
SP - 783
EP - 791
JO - Physical Review B - Condensed Matter and Materials Physics
JF - Physical Review B - Condensed Matter and Materials Physics
IS - 2
ER -