Surface-related phase changes and structure modifications in silicon with ultrafast laser pulses

P. A. VanRompay, X. Liu, R. K. Singh, P. P. Pronko

Research output: Contribution to journalConference articlepeer-review

Abstract

This report presents an overview of experiments and modeling calculations on the energy absorption mechanisms and the near-surface thermodynamic phase changes and structure modifications in silicon as a result of exposure to femtosecond and picosecond laser pulses in the wavelength range of 760 to 800 nm. It is shown that these short pulses produce sufficiently high electric field intensities to cause avalanche dielectric breakdown in the near-surface region, and that free electrons so generated act as the dominant absorbing centers for the incoming radiation. Furthermore, it is shown that the coupling process depends on a number of factors such as the phase state of the material and the state of the electrons during the incoming pulse.

Original languageEnglish
Pages (from-to)2
Number of pages2
JournalLEOS Summer Topical Meeting
StatePublished - 1996
Externally publishedYes
EventProceedings of the 1996 IEEE/LEOS Summer Topical Meeting - Keystone, CO, USA
Duration: 5 Aug 19969 Aug 1996

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