Surface passivation of polycrystalline, chalcogenide based photovoltaic cells

David Cahen; Rommel Noufi

doi:10.1016/0379-6787(91)90037-p

Surface passivation of polycrystalline, chalcogenide based photovoltaic cells

David Cahen, Rommel Noufi

Research output: Contribution to journal › Article › peer-review

53 Scopus citations

Abstract

We present a summary of our defect chemical microscopic model for the effect that annealing in air or oxygen has on CuInSe₂ and CdTe-based polycrystalline thin film solar cells and explain its generalization to other chalcogenide-based semiconductor devices. The summary includes a hypothesis for specific O₂ (molecule) and surface interaction. From the point of view of device performance, the model provides a specific chemical explanation for the conclusions obtained from device analyses that the performance of the present generation of polycrystalline cells of this type is mainly limited by recombination at grain surfaces and boundaries.

Original language	English
Pages (from-to)	53-59
Number of pages	7
Journal	Solar Cells
Volume	30
Issue number	1-4
DOIs	https://doi.org/10.1016/0379-6787(91)90037-p
State	Published - May 1991
Externally published	Yes

Funding

D. C. thanks the Israel National Council for Research and Development, through the KFA Julich (Germany) for practical support. Work at SERI is supported under U.S. DOE contract CE-AC02-CH0093. We thank Dr. H. Dittrich, Institute for Physics and Electronics, University of Stuttgart for the PBC argument.

Funders	Funder number
Israel National Council for Research and Development
U.S. Department of Energy	CE-AC02-CH0093
Spine Education and Research Institute

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@article{ab550fba1959472ab30c1bd74bf6a1f0,

title = "Surface passivation of polycrystalline, chalcogenide based photovoltaic cells",

abstract = "We present a summary of our defect chemical microscopic model for the effect that annealing in air or oxygen has on CuInSe2 and CdTe-based polycrystalline thin film solar cells and explain its generalization to other chalcogenide-based semiconductor devices. The summary includes a hypothesis for specific O2 (molecule) and surface interaction. From the point of view of device performance, the model provides a specific chemical explanation for the conclusions obtained from device analyses that the performance of the present generation of polycrystalline cells of this type is mainly limited by recombination at grain surfaces and boundaries.",

author = "David Cahen and Rommel Noufi",

year = "1991",

month = may,

doi = "10.1016/0379-6787(91)90037-p",

language = "אנגלית",

volume = "30",

pages = "53--59",

journal = "Solar Cells",

issn = "0379-6787",

publisher = "Elsevier BV",

number = "1-4",

}

TY - JOUR

T1 - Surface passivation of polycrystalline, chalcogenide based photovoltaic cells

AU - Cahen, David

AU - Noufi, Rommel

PY - 1991/5

Y1 - 1991/5

N2 - We present a summary of our defect chemical microscopic model for the effect that annealing in air or oxygen has on CuInSe2 and CdTe-based polycrystalline thin film solar cells and explain its generalization to other chalcogenide-based semiconductor devices. The summary includes a hypothesis for specific O2 (molecule) and surface interaction. From the point of view of device performance, the model provides a specific chemical explanation for the conclusions obtained from device analyses that the performance of the present generation of polycrystalline cells of this type is mainly limited by recombination at grain surfaces and boundaries.

AB - We present a summary of our defect chemical microscopic model for the effect that annealing in air or oxygen has on CuInSe2 and CdTe-based polycrystalline thin film solar cells and explain its generalization to other chalcogenide-based semiconductor devices. The summary includes a hypothesis for specific O2 (molecule) and surface interaction. From the point of view of device performance, the model provides a specific chemical explanation for the conclusions obtained from device analyses that the performance of the present generation of polycrystalline cells of this type is mainly limited by recombination at grain surfaces and boundaries.

UR - http://www.scopus.com/inward/record.url?scp=0026157473&partnerID=8YFLogxK

U2 - 10.1016/0379-6787(91)90037-p

DO - 10.1016/0379-6787(91)90037-p

M3 - ???researchoutput.researchoutputtypes.contributiontojournal.article???

AN - SCOPUS:0026157473

SN - 0379-6787

VL - 30

SP - 53

EP - 59

JO - Solar Cells

JF - Solar Cells

IS - 1-4

ER -

Surface passivation of polycrystalline, chalcogenide based photovoltaic cells

Abstract

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