Surface-particle interactions in the chemical mechanical polishing process

Keyphrases

• Polishing Process 100%
• Chemical Mechanical Polishing 100%
• Surface Particle Interaction 100%
• Particulate 40%
• Polishing Slurry 40%
• Surface Modification 20%
• Atomic Force Microscopy 20%
• Deposited Material 20%
• Surfactant 20%
• Acidic pH 20%
• Difficult Problem 20%
• Integrated Circuits 20%
• Circuitry 20%
• Tungsten 20%
• Oxidizer 20%
• Abrasive 20%
• Interconnect Materials 20%
• Alumina Slurry 20%
• Active Solutions 20%

Engineering

• Particle Surface 100%
• Polishing Process 100%
• Chemical Mechanical Polishing 100%
• Polishing Slurry 40%
• Aluminum Oxide 20%
• Interconnects 20%
• Integrated Circuit 20%
• Surfactant 20%
• Deposited Material 20%
• Atomic Force Microscopy 20%
• Oxidizer 20%
• Initial Investigation 20%
• Chemical Polishing 20%

Material Science

• Chemical Mechanical Planarization 100%
• Surface Active Agent 20%
• Electronic Circuit 20%
• Aluminum Oxide 20%
• Tungsten 20%
• Polishing 20%