Surface Interactions of Oxygen Suffice to P-Dope the Halide Perovskites

Ansuman Halder; Anat Itzhak; Eli Rosh Hodesh; Shay Tirosh; David Cahen

doi:10.1002/admi.202200569

Surface Interactions of Oxygen Suffice to P-Dope the Halide Perovskites

Ansuman Halder, Anat Itzhak, Eli Rosh Hodesh, Shay Tirosh, David Cahen

Department of Chemistry

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

Attempts to dope halide perovskites (HaPs) extrinsically have been mostly unsuccessful. Still, oxygen (O₂) is an efficient p-dopant for polycrystalline HaP films. To an extent, this doping is reversible, i.e., the films can be de-doped by decreasing the O₂ partial pressure. Here results are reported, aimed at understanding the mechanism of such reversible doping, as it has been argued that doping involves interaction of oxygen with defects inside bulk HaP. These experimental results clearly point out that O₂-surface interactions suffice to dope the bulk of the films. Such behavior fits what is known for other polycrystalline semiconductors, where surface charge transfer-adducts can form and be removed. Thus, controlling the O₂ partial pressure to which the HaP film is exposed, can, after proper encapsulation, achieve the desired bulk doping of the film.

Original language	English
Article number	2200569
Journal	Advanced Materials Interfaces
Volume	9
Issue number	18
DOIs	https://doi.org/10.1002/admi.202200569
State	Published - 22 Jun 2022

Bibliographical note

Publisher Copyright:
© 2022 The Authors. Advanced Materials Interfaces published by Wiley-VCH GmbH.

Funding

The author(s) disclosed receipt of the following financial support for the research, authorship, and/or publication of this article: The manuscript is supported by the National Natural Science Foundation of China (51675164). The authors thank the Israeli Ministry of National Infrastructure, Energy, and Water, and the United-States Israel Binational Foundation (BSF) for partial support. AI thanks to the Israel Ministry of Science and Technology. The authors thank Naga Prathibha Jasti for her assistance in TRPL measurement.

Funders	Funder number
Israeli Ministry of National Infrastructure, Energy, and Water
United States - Israel Binational Science Foundation
United States-Israel Binational Science Foundation
National Natural Science Foundation of China	51675164
Ministry of science and technology, Israel

Keywords

charge transfer
oxygen doping
surface doping
surface photovoltage

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Cite this

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abstract = "Attempts to dope halide perovskites (HaPs) extrinsically have been mostly unsuccessful. Still, oxygen (O2) is an efficient p-dopant for polycrystalline HaP films. To an extent, this doping is reversible, i.e., the films can be de-doped by decreasing the O2 partial pressure. Here results are reported, aimed at understanding the mechanism of such reversible doping, as it has been argued that doping involves interaction of oxygen with defects inside bulk HaP. These experimental results clearly point out that O2-surface interactions suffice to dope the bulk of the films. Such behavior fits what is known for other polycrystalline semiconductors, where surface charge transfer-adducts can form and be removed. Thus, controlling the O2 partial pressure to which the HaP film is exposed, can, after proper encapsulation, achieve the desired bulk doping of the film.",

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AU - Halder, Ansuman

AU - Itzhak, Anat

AU - Hodesh, Eli Rosh

AU - Tirosh, Shay

AU - Cahen, David

PY - 2022/6/22

Y1 - 2022/6/22

N2 - Attempts to dope halide perovskites (HaPs) extrinsically have been mostly unsuccessful. Still, oxygen (O2) is an efficient p-dopant for polycrystalline HaP films. To an extent, this doping is reversible, i.e., the films can be de-doped by decreasing the O2 partial pressure. Here results are reported, aimed at understanding the mechanism of such reversible doping, as it has been argued that doping involves interaction of oxygen with defects inside bulk HaP. These experimental results clearly point out that O2-surface interactions suffice to dope the bulk of the films. Such behavior fits what is known for other polycrystalline semiconductors, where surface charge transfer-adducts can form and be removed. Thus, controlling the O2 partial pressure to which the HaP film is exposed, can, after proper encapsulation, achieve the desired bulk doping of the film.

AB - Attempts to dope halide perovskites (HaPs) extrinsically have been mostly unsuccessful. Still, oxygen (O2) is an efficient p-dopant for polycrystalline HaP films. To an extent, this doping is reversible, i.e., the films can be de-doped by decreasing the O2 partial pressure. Here results are reported, aimed at understanding the mechanism of such reversible doping, as it has been argued that doping involves interaction of oxygen with defects inside bulk HaP. These experimental results clearly point out that O2-surface interactions suffice to dope the bulk of the films. Such behavior fits what is known for other polycrystalline semiconductors, where surface charge transfer-adducts can form and be removed. Thus, controlling the O2 partial pressure to which the HaP film is exposed, can, after proper encapsulation, achieve the desired bulk doping of the film.

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Surface Interactions of Oxygen Suffice to P-Dope the Halide Perovskites

Abstract

Bibliographical note

Funding

Keywords

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