Skip to main navigation Skip to search Skip to main content

Surface acoustic wave-photonic devices in silicon nitride integrated circuits

  • Inbar Shafir
  • , Leroy Dokhanian
  • , Matan Slook
  • , Shai Ben-Ami
  • , Maayan Holsblat
  • , Ohad Westreich
  • , Assaf Klar
  • , Avi Zadok
  • Soreq Nuclear Research Center
  • Technion-Israel Institute of Technology
  • Bar-Ilan University

Research output: Contribution to journalArticlepeer-review

Abstract

Acoustic waves are introduced to a silicon nitride photonic integrated circuit. The acoustic waves are generated through thermo-elastic actuation in a metallic grating and monitored using photo-elastic modulation in a racetrack resonator readout waveguide. The stimulation of three acoustic modes of the layers structure is observed. The frequencies and group velocities of the three modes agree with calculations. The acoustic frequency reaches 1.3 GHz. The concept introduces high-frequency modulation to the otherwise passive silicon nitride platform. The efficiency of photo-elastic modulation is modest: estimated as 6 × 10−8 refractive index units for 1 W of optical pump power. With future work, the concept may find applications in microwave photonic signal processing, optical and mechanical sensors, and characterization of materials and layers.

Original languageEnglish
Article number096114
JournalAPL Photonics
Volume10
Issue number9
DOIs
StatePublished - 1 Sep 2025

Bibliographical note

Publisher Copyright:
© 2025 Author(s).

Fingerprint

Dive into the research topics of 'Surface acoustic wave-photonic devices in silicon nitride integrated circuits'. Together they form a unique fingerprint.

Cite this