Suppression of the localization in the two-dimensional conductivity of Si-δ-doped GaAs by Mn co-doping

K. J. Friedland; I. S. Shlimak; P. Schützendübe

doi:10.1016/s0921-4526(98)00308-1

Suppression of the localization in the two-dimensional conductivity of Si-δ-doped GaAs by Mn co-doping

K. J. Friedland
, I. S. Shlimak
, P. Schützendübe

Department of Physics - at Bar-Ilan University

Paul Drude Institute for Solid State Electronics

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

We present low-temperature magnetotransport investigations of the 2D-conductivity in Si-δ-doped GaAs samples where the donors are strongly compensated by Mn acceptors. It is shown that the compensation by Mn acceptors effects (i) a suppression of the decrease of conductivity caused by the effect of weak localization, (ii) the saturation of the phase relaxation time τ_φ at low temperature and (iii) a non-occurrence of the metal-insulator transition under the application of a high magnetic field and on lowering the electron density. The effects (i) and (ii) are explained taking into account that doping with Mn leads to the appearance of localized magnetic moments. To explain (iii) we speculate that the spatial distribution of Mn acceptors and Si-donors is correlated resulting in a smoothing of the fluctuation of the scattering potential.

Original language	English
Pages (from-to)	758-761
Number of pages	4
Journal	Physica B: Condensed Matter
Volume	249-251
DOIs	https://doi.org/10.1016/s0921-4526(98)00308-1
State	Published - 17 Jun 1998

Bibliographical note

Funding Information:
This work was supported by the German-Israeli Foundation (G.I.F., Grant No.I-0319-199.07). We wish to thank V. Ginodman for his help in low-temperature measurements and Yu. Galperin for helpful discussions. We gratefully acknowledge the support of the Eric and Sheila Samson Chair of Semiconductor Technology.

Funding

This work was supported by the German-Israeli Foundation (G.I.F., Grant No.I-0319-199.07). We wish to thank V. Ginodman for his help in low-temperature measurements and Yu. Galperin for helpful discussions. We gratefully acknowledge the support of the Eric and Sheila Samson Chair of Semiconductor Technology.

Funders	Funder number
German-Israeli Foundation for Scientific Research and Development	No.I-0319-199.07

Keywords

Delta doping
Localization
Magnetotransport

Access to Document

10.1016/s0921-4526(98)00308-1

Cite this

@article{c9606ca3041a48dd8dee3fa1d4afbe66,

title = "Suppression of the localization in the two-dimensional conductivity of Si-δ-doped GaAs by Mn co-doping",

abstract = "We present low-temperature magnetotransport investigations of the 2D-conductivity in Si-δ-doped GaAs samples where the donors are strongly compensated by Mn acceptors. It is shown that the compensation by Mn acceptors effects (i) a suppression of the decrease of conductivity caused by the effect of weak localization, (ii) the saturation of the phase relaxation time τφ at low temperature and (iii) a non-occurrence of the metal-insulator transition under the application of a high magnetic field and on lowering the electron density. The effects (i) and (ii) are explained taking into account that doping with Mn leads to the appearance of localized magnetic moments. To explain (iii) we speculate that the spatial distribution of Mn acceptors and Si-donors is correlated resulting in a smoothing of the fluctuation of the scattering potential.",

keywords = "Delta doping, Localization, Magnetotransport",

author = "Friedland, \{K. J.\} and Shlimak, \{I. S.\} and P. Sch{\"u}tzend{\"u}be",

note = "Funding Information: This work was supported by the German-Israeli Foundation (G.I.F., Grant No.I-0319-199.07). We wish to thank V. Ginodman for his help in low-temperature measurements and Yu. Galperin for helpful discussions. We gratefully acknowledge the support of the Eric and Sheila Samson Chair of Semiconductor Technology. ",

year = "1998",

month = jun,

day = "17",

doi = "10.1016/s0921-4526(98)00308-1",

language = "אנגלית",

volume = "249-251",

pages = "758--761",

journal = "Physica B: Condensed Matter",

issn = "0921-4526",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Suppression of the localization in the two-dimensional conductivity of Si-δ-doped GaAs by Mn co-doping

AU - Friedland, K. J.

AU - Shlimak, I. S.

AU - Schützendübe, P.

N1 - Funding Information: This work was supported by the German-Israeli Foundation (G.I.F., Grant No.I-0319-199.07). We wish to thank V. Ginodman for his help in low-temperature measurements and Yu. Galperin for helpful discussions. We gratefully acknowledge the support of the Eric and Sheila Samson Chair of Semiconductor Technology.

PY - 1998/6/17

Y1 - 1998/6/17

N2 - We present low-temperature magnetotransport investigations of the 2D-conductivity in Si-δ-doped GaAs samples where the donors are strongly compensated by Mn acceptors. It is shown that the compensation by Mn acceptors effects (i) a suppression of the decrease of conductivity caused by the effect of weak localization, (ii) the saturation of the phase relaxation time τφ at low temperature and (iii) a non-occurrence of the metal-insulator transition under the application of a high magnetic field and on lowering the electron density. The effects (i) and (ii) are explained taking into account that doping with Mn leads to the appearance of localized magnetic moments. To explain (iii) we speculate that the spatial distribution of Mn acceptors and Si-donors is correlated resulting in a smoothing of the fluctuation of the scattering potential.

AB - We present low-temperature magnetotransport investigations of the 2D-conductivity in Si-δ-doped GaAs samples where the donors are strongly compensated by Mn acceptors. It is shown that the compensation by Mn acceptors effects (i) a suppression of the decrease of conductivity caused by the effect of weak localization, (ii) the saturation of the phase relaxation time τφ at low temperature and (iii) a non-occurrence of the metal-insulator transition under the application of a high magnetic field and on lowering the electron density. The effects (i) and (ii) are explained taking into account that doping with Mn leads to the appearance of localized magnetic moments. To explain (iii) we speculate that the spatial distribution of Mn acceptors and Si-donors is correlated resulting in a smoothing of the fluctuation of the scattering potential.

KW - Delta doping

KW - Localization

KW - Magnetotransport

UR - https://www.scopus.com/pages/publications/0032093799

U2 - 10.1016/s0921-4526(98)00308-1

DO - 10.1016/s0921-4526(98)00308-1

M3 - ???researchoutput.researchoutputtypes.contributiontojournal.article???

AN - SCOPUS:0032093799

SN - 0921-4526

VL - 249-251

SP - 758

EP - 761

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

ER -

Suppression of the localization in the two-dimensional conductivity of Si-δ-doped GaAs by Mn co-doping

Abstract

Bibliographical note

Funding

Keywords

Access to Document

Other files and links

Fingerprint

Cite this