Abstract
The diffusion and electromigration of Ag in crystals of CdxHg1-xTe is studied, as a function of original doping level and of the concentration of mercury. In materials with x = 0.55-0.8, Ag dopes p-type, when diffusing in at <125°C. This should be contrasted to what is found in n-CdTe, where in-diffusion of Ag at 200°C increases the net donor density, leaving the material n-type. Our results show that the higher is the mercury content or the hole concentration in CdxHg1-xTe (x = 0.55-0.8), the faster Ag will diffuse in these materials. We explain our results, building on earlier suggestions made for Hg-rich materials, by assuming that silver diffuses by way of a substitutional-interstitial mechanism; i.e., it is present as two species with opposite charge, one of which dominates and is practically immobile, while the minority species diffuses rapidly. These forms equilibrate, at room temperature, within a few seconds, something that can be understood by postulating silver-mercury complex formation. If both forms of silver are bound to mercury, then this hypothesis explains the strong influence of mercury content on the diffusion behavior.
Original language | English |
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Pages (from-to) | 97-105 |
Number of pages | 9 |
Journal | Journal of Electronic Materials |
Volume | 26 |
Issue number | 2 |
DOIs | |
State | Published - Feb 1997 |
Funding
This work is supported in part by grants from the Israel Ministry of Science-European Union program, the US-Israel Binational Science Foundation, Jerusalem, Israel and the Minerva Foundation. Cooperation was in the framework of the France-Israel Arc en Ciel program. We thank the reviewers for constructive criticism and for drawing our attention to Refs. 10 and 11.
Funders | Funder number |
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Israel Ministry of Science-European Union | |
US-Israel Binational Science Foundation | |
Minerva Foundation |
Keywords
- Diffusion
- Electromigration
- Mercury cadmium telluride