Substituent variation drives metal/monolayer/semiconductor junctions from strongly rectifying to ohmic behavior

Abd Elrazek Haj-Yahia; Omer Yaffe; Tatyana Bendikov; Hagai Cohen; Yishay Feldman; Ayelet Vilan; David Cahen

doi:10.1002/adma.201203028

Substituent variation drives metal/monolayer/semiconductor junctions from strongly rectifying to ohmic behavior

Abd Elrazek Haj-Yahia, Omer Yaffe, Tatyana Bendikov, Hagai Cohen, Yishay Feldman, Ayelet Vilan, David Cahen

Weizmann Institute of Science

Research output: Contribution to journal › Article › peer-review

33 Scopus citations

Abstract

An eight-orders of magnitude enhancement in current across Hg/X-styrene-Si junctions is caused by merely altering a substituent, X. Interface states are passivated and, depending on X, the Si Schottky junction encompasses the full range from Ohmic to strongly rectifying. This powerful electrostatic molecular effect has immediate implications for interface band alignment and sensing.

Original language	English
Pages (from-to)	702-706
Number of pages	5
Journal	Advanced Materials
Volume	25
Issue number	5
DOIs	https://doi.org/10.1002/adma.201203028
State	Published - 6 Feb 2013
Externally published	Yes

Keywords

Si ohmic-contact
inverted Si junction
molecular dipole
molecular electronics
silicon

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10.1002/adma.201203028

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AU - Cohen, Hagai

AU - Feldman, Yishay

AU - Vilan, Ayelet

AU - Cahen, David

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KW - inverted Si junction

KW - molecular dipole

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Substituent variation drives metal/monolayer/semiconductor junctions from strongly rectifying to ohmic behavior

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Keywords

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