Sub-nanosecond time resolved XAFS of laser excited thin Ge films

E. A. Stern; D. L. Brewe; K. M. Beck; S. M. Heald; Y. Feng

doi:10.1238/Physica.Topical.115a01044

Sub-nanosecond time resolved XAFS of laser excited thin Ge films

E. A. Stern, D. L. Brewe, K. M. Beck, S. M. Heald, Y. Feng

Research output: Contribution to journal › Conference article › peer-review

8 Scopus citations

Abstract

A facility at PNC-CAT in the Advanced Photon Source measures with sub-nanosecond time resolution both XAFS and diffraction on femtosecond laser-excited samples. XAFS measures with relatively high efficiency the time for the laser excitation to couple to the lattice, the sample temperature after reaching thermal equilibrium, any ablation of the sample with time, and, in many cases can distinguish between the amorphous and crystalline states. Preliminary measurements on 200 nm thick polycrystal Ge films indicate that the time for transferring the laser excitation to thermal heating of the lattice is less than 2?nanoseconds when the initial temperature is 560?K.

Original language	English
Pages (from-to)	1044-1046
Number of pages	3
Journal	Physica Scripta
Volume	T115
DOIs	https://doi.org/10.1238/Physica.Topical.115a01044
State	Published - 2005
Externally published	Yes
Event	12th X-ray Absorption Fine Structure International Conference, XAFS12 - Malmo, Sweden Duration: 23 Jun 2003 → 27 Jun 2003

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10.1238/Physica.Topical.115a01044

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title = "Sub-nanosecond time resolved XAFS of laser excited thin Ge films",

abstract = "A facility at PNC-CAT in the Advanced Photon Source measures with sub-nanosecond time resolution both XAFS and diffraction on femtosecond laser-excited samples. XAFS measures with relatively high efficiency the time for the laser excitation to couple to the lattice, the sample temperature after reaching thermal equilibrium, any ablation of the sample with time, and, in many cases can distinguish between the amorphous and crystalline states. Preliminary measurements on 200 nm thick polycrystal Ge films indicate that the time for transferring the laser excitation to thermal heating of the lattice is less than 2?nanoseconds when the initial temperature is 560?K.",

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AU - Stern, E. A.

AU - Brewe, D. L.

AU - Beck, K. M.

AU - Heald, S. M.

AU - Feng, Y.

PY - 2005

Y1 - 2005

N2 - A facility at PNC-CAT in the Advanced Photon Source measures with sub-nanosecond time resolution both XAFS and diffraction on femtosecond laser-excited samples. XAFS measures with relatively high efficiency the time for the laser excitation to couple to the lattice, the sample temperature after reaching thermal equilibrium, any ablation of the sample with time, and, in many cases can distinguish between the amorphous and crystalline states. Preliminary measurements on 200 nm thick polycrystal Ge films indicate that the time for transferring the laser excitation to thermal heating of the lattice is less than 2?nanoseconds when the initial temperature is 560?K.

AB - A facility at PNC-CAT in the Advanced Photon Source measures with sub-nanosecond time resolution both XAFS and diffraction on femtosecond laser-excited samples. XAFS measures with relatively high efficiency the time for the laser excitation to couple to the lattice, the sample temperature after reaching thermal equilibrium, any ablation of the sample with time, and, in many cases can distinguish between the amorphous and crystalline states. Preliminary measurements on 200 nm thick polycrystal Ge films indicate that the time for transferring the laser excitation to thermal heating of the lattice is less than 2?nanoseconds when the initial temperature is 560?K.

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Sub-nanosecond time resolved XAFS of laser excited thin Ge films

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