Sub-nanosecond time resolved XAFS of laser excited thin Ge films

E. A. Stern, D. L. Brewe, K. M. Beck, S. M. Heald, Y. Feng

Research output: Contribution to journalConference articlepeer-review

8 Scopus citations


A facility at PNC-CAT in the Advanced Photon Source measures with sub-nanosecond time resolution both XAFS and diffraction on femtosecond laser-excited samples. XAFS measures with relatively high efficiency the time for the laser excitation to couple to the lattice, the sample temperature after reaching thermal equilibrium, any ablation of the sample with time, and, in many cases can distinguish between the amorphous and crystalline states. Preliminary measurements on 200 nm thick polycrystal Ge films indicate that the time for transferring the laser excitation to thermal heating of the lattice is less than 2?nanoseconds when the initial temperature is 560?K.

Original languageEnglish
Pages (from-to)1044-1046
Number of pages3
JournalPhysica Scripta
StatePublished - 2005
Externally publishedYes
Event12th X-ray Absorption Fine Structure International Conference, XAFS12 - Malmo, Sweden
Duration: 23 Jun 200327 Jun 2003


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