Study on Magnetron Sputtered Nb-Doped ZnO Thin Films switching properties for RRAM Applications

Amit K. Chawla, Ratnesh Pandey, Akula Umamaheswara Rao, Archana Singh Kharb, Avaani Chanana, Kifayat H. Mir, Pramod Kumar, Tarun Garg, Vipin Chawla, Ravish Jain, Charu Pant, Sanjeev Kumar

Research output: Contribution to journalArticlepeer-review

Abstract

Resistive switching characteristics of ZnO-based nanomaterials make them useful candidates for applications in resistive random access memory (RRAM). In the present work, Nb-doped ZnO thin films prepared using RF sputtering with varying doping concentrations were studied using XRD, UV-Vis spectroscopy, Field Emission Scanning Electron Microscopy (FESEM), Energy Dispersive X-ray Spectroscopy (EDS), I-V, XPS and AFM measurements to investigate the structural, optical, electrical properties and roughness of the films. The XRD analysis revealed a shift in the (002) peak corresponding to hexagonal wurtzite structure, towards lower angles with increasing doping concentration, indicating a doping-induced modification of crystal structure. The UV-Vis spectroscopy showed an increase in the band gap energy with increasing doping concentration. The electrical conductivity of the films was found to increase with doping concentration, as determined by I-V measurements. The XPS analysis confirmed the presence of Nb in the doped films and provided information on the chemical states of the elements. Overall, the results suggest that Nb doping can significantly modify the structural properties of ZnO thin films which alters the electrical properties to match the requirements for potential applications in memory devices.

Original languageEnglish
Article numbere202302882
JournalChemistrySelect
Volume8
Issue number39
DOIs
StatePublished - 20 Oct 2023
Externally publishedYes

Bibliographical note

Publisher Copyright:
© 2023 Wiley-VCH GmbH.

Keywords

  • RRAM
  • Urbach Energy
  • ZnO thin films
  • magnetron sputtering
  • optical band gap

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