Study of Topological Insulator Bi2Se3/GaN and Bi2Se3/Si Heterostructure for Photodetector Devices

Vidushi Gautam; Pramod Kumar

doi:10.1109/wrap59682.2023.10713052

Study of Topological Insulator Bi₂Se₃/GaN and Bi₂Se₃/Si Heterostructure for Photodetector Devices

Vidushi Gautam
, Pramod Kumar

Indian Institute of Information Technology, Allahabad

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

The study of photodetectors with broadband response and strong responsivity-detectivity is crucial. Topological insulators are particularly promising in the quest for materials with remarkable optoelectronic capabilities in the visible to mid-IR region due to their unique Dirac-like surface states and excellent lightabsorption properties. Herein we report the heterojunction of Bi₂Se₃/GaN and Bi₂Se₃/Si named as S₁ and S₂ deposited by the thermal evaporation method for highly responsive optoelectronic devices. The excellent performance of the responsivity and detectivity of both samples S₁ and S₂ revealed the fact that the substrates have a major impact on the photoresponse characteristics.

Original language	English
Title of host publication	2023 IEEE Workshop on Recent Advances in Photonics, WRAP 2023
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9798350340839
DOIs	https://doi.org/10.1109/wrap59682.2023.10713052
State	Published - 2023
Externally published	Yes
Event	2023 IEEE Workshop on Recent Advances in Photonics, WRAP 2023 - Prayagraj, India Duration: 7 Dec 2023 → 9 Dec 2023

Publication series

Name	2023 IEEE Workshop on Recent Advances in Photonics, WRAP 2023

Conference

Conference	2023 IEEE Workshop on Recent Advances in Photonics, WRAP 2023
Country/Territory	India
City	Prayagraj
Period	7/12/23 → 9/12/23

Bibliographical note

Publisher Copyright:
© 2023 IEEE.

Keywords

BiSe/Si and Bi2Se3/GaN heterojunction
Photodetectors
Topological insulator

Access to Document

10.1109/wrap59682.2023.10713052

Cite this

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title = "Study of Topological Insulator Bi2Se3/GaN and Bi2Se3/Si Heterostructure for Photodetector Devices",

abstract = "The study of photodetectors with broadband response and strong responsivity-detectivity is crucial. Topological insulators are particularly promising in the quest for materials with remarkable optoelectronic capabilities in the visible to mid-IR region due to their unique Dirac-like surface states and excellent lightabsorption properties. Herein we report the heterojunction of Bi2Se3/GaN and Bi2Se3/Si named as S1 and S2 deposited by the thermal evaporation method for highly responsive optoelectronic devices. The excellent performance of the responsivity and detectivity of both samples S1 and S2 revealed the fact that the substrates have a major impact on the photoresponse characteristics.",

keywords = "BiSe/Si and Bi2Se3/GaN heterojunction, Photodetectors, Topological insulator",

author = "Vidushi Gautam and Pramod Kumar",

note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 2023 IEEE Workshop on Recent Advances in Photonics, WRAP 2023 ; Conference date: 07-12-2023 Through 09-12-2023",

year = "2023",

doi = "10.1109/wrap59682.2023.10713052",

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Gautam, V & Kumar, P 2023, Study of Topological Insulator Bi₂Se₃/GaN and Bi₂Se₃/Si Heterostructure for Photodetector Devices. in 2023 IEEE Workshop on Recent Advances in Photonics, WRAP 2023. 2023 IEEE Workshop on Recent Advances in Photonics, WRAP 2023, Institute of Electrical and Electronics Engineers Inc., 2023 IEEE Workshop on Recent Advances in Photonics, WRAP 2023, Prayagraj, India, 7/12/23. https://doi.org/10.1109/wrap59682.2023.10713052

Study of Topological Insulator Bi₂Se₃/GaN and Bi₂Se₃/Si Heterostructure for Photodetector Devices. / Gautam, Vidushi; Kumar, Pramod.
2023 IEEE Workshop on Recent Advances in Photonics, WRAP 2023. Institute of Electrical and Electronics Engineers Inc., 2023. (2023 IEEE Workshop on Recent Advances in Photonics, WRAP 2023).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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