Study of leakage-induced photon emission processes in sub-90 nm CMOS devices

Y. Weizman; M. Gurfinkel; A. Margulis; Y. Fefer; Y. Shapira; E. Baruch

doi:10.1016/j.sse.2006.04.008

Study of leakage-induced photon emission processes in sub-90 nm CMOS devices

Y. Weizman
, M. Gurfinkel
, A. Margulis
, Y. Fefer
, Y. Shapira
, E. Baruch

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

Sub-90 nm n-MOSFETs have been studied at the sub-threshold and saturation operating regimes using infra-red photon emission intensity and current measurements. The results show a distinctive difference in the photon emission yield profile below and above threshold. A new mechanism for the higher photon emission rates in the sub-threshold regime is proposed. Electrical measurements together with 2-D numerical device simulations were carried out in order to verify this new mechanism.

Original language	English
Pages (from-to)	920-923
Number of pages	4
Journal	Solid-State Electronics
Volume	50
Issue number	6
DOIs	https://doi.org/10.1016/j.sse.2006.04.008
State	Published - Jun 2006
Externally published	Yes

Keywords

Hot carrier luminescence
Leakage current
MOSFET
Photon emission
Sub-threshold current
Substrate current

Access to Document

10.1016/j.sse.2006.04.008

Cite this

@article{1d30557f416c4e37b8006a2b0cc93b9e,

title = "Study of leakage-induced photon emission processes in sub-90 nm CMOS devices",

abstract = "Sub-90 nm n-MOSFETs have been studied at the sub-threshold and saturation operating regimes using infra-red photon emission intensity and current measurements. The results show a distinctive difference in the photon emission yield profile below and above threshold. A new mechanism for the higher photon emission rates in the sub-threshold regime is proposed. Electrical measurements together with 2-D numerical device simulations were carried out in order to verify this new mechanism.",

keywords = "Hot carrier luminescence, Leakage current, MOSFET, Photon emission, Sub-threshold current, Substrate current",

author = "Y. Weizman and M. Gurfinkel and A. Margulis and Y. Fefer and Y. Shapira and E. Baruch",

year = "2006",

month = jun,

doi = "10.1016/j.sse.2006.04.008",

language = "אנגלית",

volume = "50",

pages = "920--923",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Ltd.",

number = "6",

}

TY - JOUR

T1 - Study of leakage-induced photon emission processes in sub-90 nm CMOS devices

AU - Weizman, Y.

AU - Gurfinkel, M.

AU - Margulis, A.

AU - Fefer, Y.

AU - Shapira, Y.

AU - Baruch, E.

PY - 2006/6

Y1 - 2006/6

N2 - Sub-90 nm n-MOSFETs have been studied at the sub-threshold and saturation operating regimes using infra-red photon emission intensity and current measurements. The results show a distinctive difference in the photon emission yield profile below and above threshold. A new mechanism for the higher photon emission rates in the sub-threshold regime is proposed. Electrical measurements together with 2-D numerical device simulations were carried out in order to verify this new mechanism.

AB - Sub-90 nm n-MOSFETs have been studied at the sub-threshold and saturation operating regimes using infra-red photon emission intensity and current measurements. The results show a distinctive difference in the photon emission yield profile below and above threshold. A new mechanism for the higher photon emission rates in the sub-threshold regime is proposed. Electrical measurements together with 2-D numerical device simulations were carried out in order to verify this new mechanism.

KW - Hot carrier luminescence

KW - Leakage current

KW - MOSFET

KW - Photon emission

KW - Sub-threshold current

KW - Substrate current

UR - https://www.scopus.com/pages/publications/33745744803

U2 - 10.1016/j.sse.2006.04.008

DO - 10.1016/j.sse.2006.04.008

M3 - ???researchoutput.researchoutputtypes.contributiontojournal.article???

AN - SCOPUS:33745744803

SN - 0038-1101

VL - 50

SP - 920

EP - 923

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 6

ER -

Study of leakage-induced photon emission processes in sub-90 nm CMOS devices

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this