Abstract
Sub-90 nm n-MOSFETs have been studied at the sub-threshold and saturation operating regimes using infra-red photon emission intensity and current measurements. The results show a distinctive difference in the photon emission yield profile below and above threshold. A new mechanism for the higher photon emission rates in the sub-threshold regime is proposed. Electrical measurements together with 2-D numerical device simulations were carried out in order to verify this new mechanism.
Original language | English |
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Pages (from-to) | 920-923 |
Number of pages | 4 |
Journal | Solid-State Electronics |
Volume | 50 |
Issue number | 6 |
DOIs | |
State | Published - Jun 2006 |
Externally published | Yes |
Keywords
- Hot carrier luminescence
- Leakage current
- MOSFET
- Photon emission
- Sub-threshold current
- Substrate current