Skip to main navigation Skip to search Skip to main content

Study of interface degradation of Hf-silicate gate dielectrics during thermal nitridation process

  • S. Y. Son
  • , J. H. Jang
  • , P. Kumar
  • , R. K. Singh
  • , J. H. Yuh
  • , H. Cho
  • , C. J. Kang
  • University of Florida
  • AMAT
  • Samsung

Research output: Contribution to journal › Article › peer-review

Fingerprint

Dive into the research topics of 'Study of interface degradation of Hf-silicate gate dielectrics during thermal nitridation process'. Together they form a unique fingerprint.
Sort by

Keyphrases

Material Science