Studies of dielectric properties of pulsed laser deposited (Ba, Sr)TiO3 films using LaNiO3 as conductive electrode

Anuranjan Srivastava; D. Kumar; Rajiv K. Singh

Studies of dielectric properties of pulsed laser deposited (Ba, Sr)TiO₃ films using LaNiO₃ as conductive electrode

Anuranjan Srivastava, D. Kumar, Rajiv K. Singh

University of Florida

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

LaNiO₃ (LNO) films were used as conductive bottom and top electrodes for the fabrication of (Ba_0.5Sr_0.5) TiO₃ (BST) capacitors on silicon substrates. LNO as well as BST films were grown in-situ using a pulsed laser deposition technique with no subsequent heating or oxygenation treatments. Capacitance and leakage current measurements of BST films were carried out using LNO/BST/LNO/Si structures. Using these measurements, the dielectric constant and leakage current of BST films were found to be approx. 250 and approx. 10^-8 A/cm², respectively. The results obtained in the present study suggest that LNO is a good contact electrode material for BST films in the fabrication of BST capacitors with good structural and electrical properties.

Original language	English
Pages (from-to)	41-46
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	541
State	Published - 1999
Externally published	Yes
Event	Proceedings of the 1998 MRS Fall Meeting - The Symposium 'Advanced Catalytic Materials-1998' - Boston, MA, USA Duration: 30 Nov 1998 → 3 Dec 1998

Cite this

@article{95684d685ea047b29d3a446f42b0d0c9,

title = "Studies of dielectric properties of pulsed laser deposited (Ba, Sr)TiO3 films using LaNiO3 as conductive electrode",

abstract = "LaNiO3 (LNO) films were used as conductive bottom and top electrodes for the fabrication of (Ba0.5Sr0.5) TiO3 (BST) capacitors on silicon substrates. LNO as well as BST films were grown in-situ using a pulsed laser deposition technique with no subsequent heating or oxygenation treatments. Capacitance and leakage current measurements of BST films were carried out using LNO/BST/LNO/Si structures. Using these measurements, the dielectric constant and leakage current of BST films were found to be approx. 250 and approx. 10-8 A/cm2, respectively. The results obtained in the present study suggest that LNO is a good contact electrode material for BST films in the fabrication of BST capacitors with good structural and electrical properties.",

author = "Anuranjan Srivastava and D. Kumar and Singh, \{Rajiv K.\}",

year = "1999",

language = "אנגלית",

volume = "541",

pages = "41--46",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Springer International Publishing AG",

note = "Proceedings of the 1998 MRS Fall Meeting - The Symposium 'Advanced Catalytic Materials-1998' ; Conference date: 30-11-1998 Through 03-12-1998",

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TY - JOUR

T1 - Studies of dielectric properties of pulsed laser deposited (Ba, Sr)TiO3 films using LaNiO3 as conductive electrode

AU - Srivastava, Anuranjan

AU - Kumar, D.

AU - Singh, Rajiv K.

PY - 1999

Y1 - 1999

N2 - LaNiO3 (LNO) films were used as conductive bottom and top electrodes for the fabrication of (Ba0.5Sr0.5) TiO3 (BST) capacitors on silicon substrates. LNO as well as BST films were grown in-situ using a pulsed laser deposition technique with no subsequent heating or oxygenation treatments. Capacitance and leakage current measurements of BST films were carried out using LNO/BST/LNO/Si structures. Using these measurements, the dielectric constant and leakage current of BST films were found to be approx. 250 and approx. 10-8 A/cm2, respectively. The results obtained in the present study suggest that LNO is a good contact electrode material for BST films in the fabrication of BST capacitors with good structural and electrical properties.

AB - LaNiO3 (LNO) films were used as conductive bottom and top electrodes for the fabrication of (Ba0.5Sr0.5) TiO3 (BST) capacitors on silicon substrates. LNO as well as BST films were grown in-situ using a pulsed laser deposition technique with no subsequent heating or oxygenation treatments. Capacitance and leakage current measurements of BST films were carried out using LNO/BST/LNO/Si structures. Using these measurements, the dielectric constant and leakage current of BST films were found to be approx. 250 and approx. 10-8 A/cm2, respectively. The results obtained in the present study suggest that LNO is a good contact electrode material for BST films in the fabrication of BST capacitors with good structural and electrical properties.

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AN - SCOPUS:0032592449

SN - 0272-9172

VL - 541

SP - 41

EP - 46

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1998 MRS Fall Meeting - The Symposium 'Advanced Catalytic Materials-1998'

Y2 - 30 November 1998 through 3 December 1998

ER -

Studies of dielectric properties of pulsed laser deposited (Ba, Sr)TiO₃ films using LaNiO₃ as conductive electrode

Abstract

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