Studies of dielectric properties of pulsed laser deposited (Ba, Sr)TiO3 films using LaNiO3 as conductive electrode

Anuranjan Srivastava, D. Kumar, Rajiv K. Singh

Research output: Contribution to journalConference articlepeer-review

1 Scopus citations

Abstract

LaNiO3 (LNO) films were used as conductive bottom and top electrodes for the fabrication of (Ba0.5Sr0.5) TiO3 (BST) capacitors on silicon substrates. LNO as well as BST films were grown in-situ using a pulsed laser deposition technique with no subsequent heating or oxygenation treatments. Capacitance and leakage current measurements of BST films were carried out using LNO/BST/LNO/Si structures. Using these measurements, the dielectric constant and leakage current of BST films were found to be approx. 250 and approx. 10-8 A/cm2, respectively. The results obtained in the present study suggest that LNO is a good contact electrode material for BST films in the fabrication of BST capacitors with good structural and electrical properties.

Original languageEnglish
Pages (from-to)41-46
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume541
StatePublished - 1999
Externally publishedYes
EventProceedings of the 1998 MRS Fall Meeting - The Symposium 'Advanced Catalytic Materials-1998' - Boston, MA, USA
Duration: 30 Nov 19983 Dec 1998

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