TY - JOUR
T1 - Studies of dielectric properties of pulsed laser deposited (Ba, Sr)TiO3 films using LaNiO3 as conductive electrode
AU - Srivastava, Anuranjan
AU - Kumar, D.
AU - Singh, Rajiv K.
PY - 1999
Y1 - 1999
N2 - LaNiO3 (LNO) films were used as conductive bottom and top electrodes for the fabrication of (Ba0.5Sr0.5) TiO3 (BST) capacitors on silicon substrates. LNO as well as BST films were grown in-situ using a pulsed laser deposition technique with no subsequent heating or oxygenation treatments. Capacitance and leakage current measurements of BST films were carried out using LNO/BST/LNO/Si structures. Using these measurements, the dielectric constant and leakage current of BST films were found to be approx. 250 and approx. 10-8 A/cm2, respectively. The results obtained in the present study suggest that LNO is a good contact electrode material for BST films in the fabrication of BST capacitors with good structural and electrical properties.
AB - LaNiO3 (LNO) films were used as conductive bottom and top electrodes for the fabrication of (Ba0.5Sr0.5) TiO3 (BST) capacitors on silicon substrates. LNO as well as BST films were grown in-situ using a pulsed laser deposition technique with no subsequent heating or oxygenation treatments. Capacitance and leakage current measurements of BST films were carried out using LNO/BST/LNO/Si structures. Using these measurements, the dielectric constant and leakage current of BST films were found to be approx. 250 and approx. 10-8 A/cm2, respectively. The results obtained in the present study suggest that LNO is a good contact electrode material for BST films in the fabrication of BST capacitors with good structural and electrical properties.
UR - http://www.scopus.com/inward/record.url?scp=0032592449&partnerID=8YFLogxK
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AN - SCOPUS:0032592449
SN - 0272-9172
VL - 541
SP - 41
EP - 46
JO - Materials Research Society Symposium - Proceedings
JF - Materials Research Society Symposium - Proceedings
T2 - Proceedings of the 1998 MRS Fall Meeting - The Symposium 'Advanced Catalytic Materials-1998'
Y2 - 30 November 1998 through 3 December 1998
ER -