Structural and magnetoresistance properties of La2/3Ca1/3MnO3 thin films on buffered silicon substrates

D. Kumar; S. Chattopadhyay; Walter M. Gilmore; C. B. Lee; J. Sankar; A. Kvit; A. K. Sharma; J. Narayan; S. V. Pietambaram; Rajiv K. Singh

doi:10.1063/1.1350603

Structural and magnetoresistance properties of La_2/3Ca_1/3MnO₃ thin films on buffered silicon substrates

D. Kumar, S. Chattopadhyay, Walter M. Gilmore, C. B. Lee, J. Sankar, A. Kvit, A. K. Sharma, J. Narayan, S. V. Pietambaram, Rajiv K. Singh

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

We report an epitaxial growth of LCMO (La_1/3Ca_1/3MnO₃) film on Si by using a highly conducting diffusion barrier layer of TiN. In order to achieve epitaxial growth of LCMO films, MgO, and SrTiO₃ films were used as intermediate layers between LCMO and TiN layers. The results have indicated that the properties of LCMO films on Si substrates, deposited under an optimized condition, are on par with the properties of LCMO films on conventional oxide substrates such as LaAlO₃ and SrTiO₃ in terms of paramagnetic to ferromagnetic transition temperature, insulator to metal transition temperature, and magnetoresistance ratio.

Original language	English
Pages (from-to)	1098-1100
Number of pages	3
Journal	Applied Physics Letters
Volume	78
Issue number	8
DOIs	https://doi.org/10.1063/1.1350603
State	Published - 19 Feb 2001
Externally published	Yes

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title = "Structural and magnetoresistance properties of La2/3Ca1/3MnO3 thin films on buffered silicon substrates",

abstract = "We report an epitaxial growth of LCMO (La1/3Ca1/3MnO3) film on Si by using a highly conducting diffusion barrier layer of TiN. In order to achieve epitaxial growth of LCMO films, MgO, and SrTiO3 films were used as intermediate layers between LCMO and TiN layers. The results have indicated that the properties of LCMO films on Si substrates, deposited under an optimized condition, are on par with the properties of LCMO films on conventional oxide substrates such as LaAlO3 and SrTiO3 in terms of paramagnetic to ferromagnetic transition temperature, insulator to metal transition temperature, and magnetoresistance ratio.",

author = "D. Kumar and S. Chattopadhyay and Gilmore, {Walter M.} and Lee, {C. B.} and J. Sankar and A. Kvit and Sharma, {A. K.} and J. Narayan and Pietambaram, {S. V.} and Singh, {Rajiv K.}",

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doi = "10.1063/1.1350603",

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TY - JOUR

T1 - Structural and magnetoresistance properties of La2/3Ca1/3MnO3 thin films on buffered silicon substrates

AU - Kumar, D.

AU - Chattopadhyay, S.

AU - Gilmore, Walter M.

AU - Lee, C. B.

AU - Sankar, J.

AU - Kvit, A.

AU - Sharma, A. K.

AU - Narayan, J.

AU - Pietambaram, S. V.

AU - Singh, Rajiv K.

PY - 2001/2/19

Y1 - 2001/2/19

N2 - We report an epitaxial growth of LCMO (La1/3Ca1/3MnO3) film on Si by using a highly conducting diffusion barrier layer of TiN. In order to achieve epitaxial growth of LCMO films, MgO, and SrTiO3 films were used as intermediate layers between LCMO and TiN layers. The results have indicated that the properties of LCMO films on Si substrates, deposited under an optimized condition, are on par with the properties of LCMO films on conventional oxide substrates such as LaAlO3 and SrTiO3 in terms of paramagnetic to ferromagnetic transition temperature, insulator to metal transition temperature, and magnetoresistance ratio.

AB - We report an epitaxial growth of LCMO (La1/3Ca1/3MnO3) film on Si by using a highly conducting diffusion barrier layer of TiN. In order to achieve epitaxial growth of LCMO films, MgO, and SrTiO3 films were used as intermediate layers between LCMO and TiN layers. The results have indicated that the properties of LCMO films on Si substrates, deposited under an optimized condition, are on par with the properties of LCMO films on conventional oxide substrates such as LaAlO3 and SrTiO3 in terms of paramagnetic to ferromagnetic transition temperature, insulator to metal transition temperature, and magnetoresistance ratio.

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JO - Applied Physics Letters

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Structural and magnetoresistance properties of La_2/3Ca_1/3MnO₃ thin films on buffered silicon substrates

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