Structural and magnetic properties of cobalt-doped rutile thin films deposited on TiN-Si

Hyuck Soo Yang; Rajiv K. Singh

doi:10.1063/1.1850603

Structural and magnetic properties of cobalt-doped rutile thin films deposited on TiN-Si

Hyuck Soo Yang
, Rajiv K. Singh

University of Florida

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Highly oriented Co-doped rutile TiO ₂ thin film on silicon has been achieved by using a TiN buffer layer. The direct deposition of TiO ₂:Co film on TiN-Si yields (110)-oriented film structure having two equivalent structural domains which are perpendicular to each other. Interestingly, no ferromagnetism is observed in this film structure down to 10 K, the reason for which is attributed to the formation of cobalt silicide in the silicon. On the other hand, when the TiO ₂:Co film is deposited on TiO ₂, formed by in situ oxidation of TiN-Si, cobalt appears highly mobile leading to segregation at the TiO ₂-Si interface along with the formation of cobalt clusters in the TiO ₂: Co film region. This is responsible for the ferromagnetism in this case.

Original language	English
Article number	043902
Journal	Journal of Applied Physics
Volume	97
Issue number	4
DOIs	https://doi.org/10.1063/1.1850603
State	Published - 15 Feb 2005
Externally published	Yes

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title = "Structural and magnetic properties of cobalt-doped rutile thin films deposited on TiN-Si",

abstract = "Highly oriented Co-doped rutile TiO 2 thin film on silicon has been achieved by using a TiN buffer layer. The direct deposition of TiO 2:Co film on TiN-Si yields (110)-oriented film structure having two equivalent structural domains which are perpendicular to each other. Interestingly, no ferromagnetism is observed in this film structure down to 10 K, the reason for which is attributed to the formation of cobalt silicide in the silicon. On the other hand, when the TiO 2:Co film is deposited on TiO 2, formed by in situ oxidation of TiN-Si, cobalt appears highly mobile leading to segregation at the TiO 2-Si interface along with the formation of cobalt clusters in the TiO 2: Co film region. This is responsible for the ferromagnetism in this case.",

author = "Yang, \{Hyuck Soo\} and Singh, \{Rajiv K.\}",

year = "2005",

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day = "15",

doi = "10.1063/1.1850603",

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T1 - Structural and magnetic properties of cobalt-doped rutile thin films deposited on TiN-Si

AU - Yang, Hyuck Soo

AU - Singh, Rajiv K.

PY - 2005/2/15

Y1 - 2005/2/15

N2 - Highly oriented Co-doped rutile TiO 2 thin film on silicon has been achieved by using a TiN buffer layer. The direct deposition of TiO 2:Co film on TiN-Si yields (110)-oriented film structure having two equivalent structural domains which are perpendicular to each other. Interestingly, no ferromagnetism is observed in this film structure down to 10 K, the reason for which is attributed to the formation of cobalt silicide in the silicon. On the other hand, when the TiO 2:Co film is deposited on TiO 2, formed by in situ oxidation of TiN-Si, cobalt appears highly mobile leading to segregation at the TiO 2-Si interface along with the formation of cobalt clusters in the TiO 2: Co film region. This is responsible for the ferromagnetism in this case.

AB - Highly oriented Co-doped rutile TiO 2 thin film on silicon has been achieved by using a TiN buffer layer. The direct deposition of TiO 2:Co film on TiN-Si yields (110)-oriented film structure having two equivalent structural domains which are perpendicular to each other. Interestingly, no ferromagnetism is observed in this film structure down to 10 K, the reason for which is attributed to the formation of cobalt silicide in the silicon. On the other hand, when the TiO 2:Co film is deposited on TiO 2, formed by in situ oxidation of TiN-Si, cobalt appears highly mobile leading to segregation at the TiO 2-Si interface along with the formation of cobalt clusters in the TiO 2: Co film region. This is responsible for the ferromagnetism in this case.

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Structural and magnetic properties of cobalt-doped rutile thin films deposited on TiN-Si

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