Structural and magnetic properties of cobalt-doped rutile thin films deposited on TiN-Si

Hyuck Soo Yang, Rajiv K. Singh

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

Highly oriented Co-doped rutile TiO 2 thin film on silicon has been achieved by using a TiN buffer layer. The direct deposition of TiO 2:Co film on TiN-Si yields (110)-oriented film structure having two equivalent structural domains which are perpendicular to each other. Interestingly, no ferromagnetism is observed in this film structure down to 10 K, the reason for which is attributed to the formation of cobalt silicide in the silicon. On the other hand, when the TiO 2:Co film is deposited on TiO 2, formed by in situ oxidation of TiN-Si, cobalt appears highly mobile leading to segregation at the TiO 2-Si interface along with the formation of cobalt clusters in the TiO 2: Co film region. This is responsible for the ferromagnetism in this case.

Original languageEnglish
Article number043902
JournalJournal of Applied Physics
Volume97
Issue number4
DOIs
StatePublished - 15 Feb 2005
Externally publishedYes

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