Strain-induced phenomena in layered materials

Abhishek K. Singh, Aaditya Manjanath, Atanu Samanta, Tribhuwan Pandey, Babu Ram Sharma

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations


Using first principles density functional theory (DFT), we investigate the effect of normal compressive strain on the bilayers of MoS2, SnS2, and their van der Waals heterostructure. These materials and the corresponding heterostructure show a universal phenomenon of reversible semiconductor-metal (S-M) transition under applied strain. Most interestingly, a van der Waals heterostructure of MoS2 and SnS2 is found to have an effective direct band gap of 0.71 eV at Γ-point. This inherent ease of tunability of electronic properties of these materials by applying strain or heterostructuring is expected to pave way for further fundamental research leading to multi-physics devices.

Original languageEnglish
Title of host publicationIEEE-NANO 2015 - 15th International Conference on Nanotechnology
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages4
ISBN (Electronic)9781467381550
StatePublished - 2015
Externally publishedYes
Event15th IEEE International Conference on Nanotechnology, IEEE-NANO 2015 - Rome, Italy
Duration: 27 Jul 201530 Jul 2015

Publication series

NameIEEE-NANO 2015 - 15th International Conference on Nanotechnology


Conference15th IEEE International Conference on Nanotechnology, IEEE-NANO 2015

Bibliographical note

Publisher Copyright:
© 2015 IEEE.


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