Strain-induced phenomena in layered materials

Abhishek K. Singh; Aaditya Manjanath; Atanu Samanta; Tribhuwan Pandey; Babu Ram Sharma

doi:10.1109/nano.2015.7388818

Strain-induced phenomena in layered materials

Abhishek K. Singh, Aaditya Manjanath, Atanu Samanta, Tribhuwan Pandey, Babu Ram Sharma

Indian Institute of Science Bangalore

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

Using first principles density functional theory (DFT), we investigate the effect of normal compressive strain on the bilayers of MoS2, SnS2, and their van der Waals heterostructure. These materials and the corresponding heterostructure show a universal phenomenon of reversible semiconductor-metal (S-M) transition under applied strain. Most interestingly, a van der Waals heterostructure of MoS2 and SnS2 is found to have an effective direct band gap of 0.71 eV at Γ-point. This inherent ease of tunability of electronic properties of these materials by applying strain or heterostructuring is expected to pave way for further fundamental research leading to multi-physics devices.

Original language	English
Title of host publication	IEEE-NANO 2015 - 15th International Conference on Nanotechnology
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1114-1117
Number of pages	4
ISBN (Electronic)	9781467381550
DOIs	https://doi.org/10.1109/nano.2015.7388818
State	Published - 2015
Externally published	Yes
Event	15th IEEE International Conference on Nanotechnology, IEEE-NANO 2015 - Rome, Italy Duration: 27 Jul 2015 → 30 Jul 2015

Publication series

Name	IEEE-NANO 2015 - 15th International Conference on Nanotechnology

Conference

Conference	15th IEEE International Conference on Nanotechnology, IEEE-NANO 2015
Country/Territory	Italy
City	Rome
Period	27/07/15 → 30/07/15

Bibliographical note

Publisher Copyright:
© 2015 IEEE.

Keywords

2-D Materials Beyond Graphene
Nanomaterials
Semiconductors
Simulation

Access to Document

10.1109/nano.2015.7388818

Cite this

Singh, A. K., Manjanath, A., Samanta, A., Pandey, T., & Sharma, B. R. (2015). Strain-induced phenomena in layered materials. In IEEE-NANO 2015 - 15th International Conference on Nanotechnology (pp. 1114-1117). Article 7388818 (IEEE-NANO 2015 - 15th International Conference on Nanotechnology). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/nano.2015.7388818

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doi = "10.1109/nano.2015.7388818",

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Singh, AK, Manjanath, A, Samanta, A, Pandey, T & Sharma, BR 2015, Strain-induced phenomena in layered materials. in IEEE-NANO 2015 - 15th International Conference on Nanotechnology., 7388818, IEEE-NANO 2015 - 15th International Conference on Nanotechnology, Institute of Electrical and Electronics Engineers Inc., pp. 1114-1117, 15th IEEE International Conference on Nanotechnology, IEEE-NANO 2015, Rome, Italy, 27/07/15. https://doi.org/10.1109/nano.2015.7388818

Strain-induced phenomena in layered materials. / Singh, Abhishek K.; Manjanath, Aaditya; Samanta, Atanu et al.
IEEE-NANO 2015 - 15th International Conference on Nanotechnology. Institute of Electrical and Electronics Engineers Inc., 2015. p. 1114-1117 7388818 (IEEE-NANO 2015 - 15th International Conference on Nanotechnology).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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Strain-induced phenomena in layered materials

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Keywords

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