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Stoner-Type Theory of Magnetism in Silicon MOSFETs
D. I. Golosov
Department of Physics - at Bar-Ilan University
Research output
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peer-review
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Keyphrases
Magnetization
100%
Stone Composition
100%
Magnetism Theory
100%
Type Theory
100%
Silicon MOSFET
100%
Metal-insulator Transition
50%
In-plane Magnetic Field
50%
Long-range Interactions
50%
Three-dimensional (3D)
50%
Two Dimensional
50%
Increased Vulnerability
50%
Quasi-two-dimensional
50%
High Density
50%
Renormalization
50%
Contact Interaction
50%
Two-dimensional Gas
50%
Function Change
50%
Paramagnetic State
50%
Ferromagnetic Transition
50%
Si MOSFET
50%
Finite Thickness
50%
Ferromagnetic Instability
50%
Electronic Wave Functions
50%
Mean-field Approach
50%
Decreasing Density
50%
Inversion Layer
50%
Low Carrier Density
50%
Mean-field
50%
Consistent Changes
50%
Physics
Field Effect Transistor
100%
Magnetism
100%
Wave Function
50%
Magnetic Field
50%