Skip to main navigation
Skip to search
Skip to main content
Bar-Ilan University Home
Help & FAQ
Home
Researchers
Organisations
Research output
Prizes
Student theses
Courses
Activities
Projects
Press/Media
Datasets
Equipment
Search by expertise, name or affiliation
Stoner magnetism in an inversion layer
D. I. Golosov
Department of Physics - at Bar-Ilan University
Research output
:
Contribution to journal
›
Article
›
peer-review
1
Scopus citations
Overview
Fingerprint
Fingerprint
Dive into the research topics of 'Stoner magnetism in an inversion layer'. Together they form a unique fingerprint.
Sort by
Weight
Alphabetically
Keyphrases
Magnetism
100%
Inversion Layer
100%
Metal-insulator Transition
33%
Magnetization
33%
Magnetic Properties
33%
Wave Function
33%
Increased Vulnerability
33%
Low Carrier Density
33%
High Density
33%
Mean Field
33%
Ferromagnetic Transition
33%
Correlation Effects
33%
Si MOSFET
33%
Ferromagnetic Instability
33%
Electronic Wave Functions
33%
Phenomenological Treatment
33%
Transverse Direction
33%
Stoner Criterion
33%
Repulsive Potentials
33%
Stoner Instability
33%
Engineering
Metal-Oxide-Semiconductor Field-Effect Transistor
100%
Carrier Density
100%
Direction Perpendicular
100%
Experimental Work
100%
Coordinate
100%
Repulsive Potential
100%
Material Science
Density
100%
Magnetism
100%
Carrier Concentration
100%
Magnetic Property
100%
Metal-Oxide-Semiconductor Field-Effect Transistor
100%
Physics
Wave Function
100%
Magnetic Properties
50%
Field Effect Transistor
50%
Coordinates
50%