Stoichiometry effects in angle -resolved photoemission and transport studies of Ti1+xS2

J. J. Barry, H. P. Hughes, P. C. Klipstein, R. H. Friend

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The authors report measurements of angle-resolved photoemission and of transport properties for the same samples of nearly stoichiometric TiS 2, and of Ti1.05S2. It is shown that the carrier densities derived from the two techniques are consistent, and the geometries of the Fermi surfaces are mapped out. The data also show that there is an indirect gap of 0.3+or-0.1 eV between the S p and Ti d bands, for both materials.

Original languageEnglish
Article number022
Pages (from-to)393-402
Number of pages10
JournalJournal of Physics C: Solid State Physics
Issue number2
StatePublished - 1983
Externally publishedYes


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