Stability Issues of Cu(In,Ga)Se2-Based Solar Cells

Jean François Guillemoles, Leeor Kronik, David Cahen, Uwe Rau, Axel Jasenek, Hans Werner Schock

Research output: Contribution to journalArticlepeer-review

241 Scopus citations


Stability aspects of the Mo/Cu(In,Ga)Se2/CdS/ZnO solar cell are reviewed and assessed. These include (i) the chemical stability of the various interfaces present in the device, (ii) the long-term behavior of metastable defects found in the Cu(In,Ga)Se2 (CIGS) compound, and (iii) the impact of Cu migration on device performance and lifetime. We find that (i) all interfaces within the structure are chemically stable, (ii) metastable defects have a beneficial effect on performance, and (iii) Cu migration effects are reversible and their possible detrimental effects are eclipsed by the beneficial effect of the metastable states. Moreover, Cu out-diffusion from the CIGS layer is absent in photovoltaic-quality CIGS. Finally, we propose a model that explains the exceptional radiation hardness and impurity tolerance of CIGS-based devices, based on the synergetic effect of copper migration and point defect reactions.

Original languageEnglish
Pages (from-to)4849-4862
Number of pages14
JournalJournal of Physical Chemistry B
Issue number20
StatePublished - 25 May 2000
Externally publishedYes


Dive into the research topics of 'Stability Issues of Cu(In,Ga)Se2-Based Solar Cells'. Together they form a unique fingerprint.

Cite this