TY - JOUR
T1 - Stability Issues of Cu(In,Ga)Se2-Based Solar Cells
AU - Guillemoles, Jean François
AU - Kronik, Leeor
AU - Cahen, David
AU - Rau, Uwe
AU - Jasenek, Axel
AU - Schock, Hans Werner
PY - 2000/5/25
Y1 - 2000/5/25
N2 - Stability aspects of the Mo/Cu(In,Ga)Se2/CdS/ZnO solar cell are reviewed and assessed. These include (i) the chemical stability of the various interfaces present in the device, (ii) the long-term behavior of metastable defects found in the Cu(In,Ga)Se2 (CIGS) compound, and (iii) the impact of Cu migration on device performance and lifetime. We find that (i) all interfaces within the structure are chemically stable, (ii) metastable defects have a beneficial effect on performance, and (iii) Cu migration effects are reversible and their possible detrimental effects are eclipsed by the beneficial effect of the metastable states. Moreover, Cu out-diffusion from the CIGS layer is absent in photovoltaic-quality CIGS. Finally, we propose a model that explains the exceptional radiation hardness and impurity tolerance of CIGS-based devices, based on the synergetic effect of copper migration and point defect reactions.
AB - Stability aspects of the Mo/Cu(In,Ga)Se2/CdS/ZnO solar cell are reviewed and assessed. These include (i) the chemical stability of the various interfaces present in the device, (ii) the long-term behavior of metastable defects found in the Cu(In,Ga)Se2 (CIGS) compound, and (iii) the impact of Cu migration on device performance and lifetime. We find that (i) all interfaces within the structure are chemically stable, (ii) metastable defects have a beneficial effect on performance, and (iii) Cu migration effects are reversible and their possible detrimental effects are eclipsed by the beneficial effect of the metastable states. Moreover, Cu out-diffusion from the CIGS layer is absent in photovoltaic-quality CIGS. Finally, we propose a model that explains the exceptional radiation hardness and impurity tolerance of CIGS-based devices, based on the synergetic effect of copper migration and point defect reactions.
UR - http://www.scopus.com/inward/record.url?scp=0001483691&partnerID=8YFLogxK
U2 - 10.1021/jp993143k
DO - 10.1021/jp993143k
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AN - SCOPUS:0001483691
SN - 1520-6106
VL - 104
SP - 4849
EP - 4862
JO - Journal of Physical Chemistry B
JF - Journal of Physical Chemistry B
IS - 20
ER -