TY - JOUR
T1 - Spontaneous layer polarization and conducting domain walls in the quantum Hall regime of bilayer graphene
AU - Dhochak, Kusum
AU - Shimshoni, Efrat
AU - Berg, Erez
N1 - Publisher Copyright:
© 2015 American Physical Society.
PY - 2015/4/6
Y1 - 2015/4/6
N2 - Bilayer graphene subjected to perpendicular magnetic and electric fields displays a subtle competition between different symmetry-broken phases, resulting from an interplay between the internal spin and valley degrees of freedom. The transition between different phases is often identified by an enhancement of the conductance. Here, we propose that the enhanced conductance at the transition is due to the appearance of robust conducting edge states at domain walls between the two phases. We formulate a criterion for the existence of such conducting edge states at the domain walls. For example, for a spontaneously layer polarized state at filling factor ν=2, domain walls between regions of opposite polarization carry conducting edge modes. A microscopic analysis shows that lattice-scale interactions can favor such a layer polarized state.
AB - Bilayer graphene subjected to perpendicular magnetic and electric fields displays a subtle competition between different symmetry-broken phases, resulting from an interplay between the internal spin and valley degrees of freedom. The transition between different phases is often identified by an enhancement of the conductance. Here, we propose that the enhanced conductance at the transition is due to the appearance of robust conducting edge states at domain walls between the two phases. We formulate a criterion for the existence of such conducting edge states at the domain walls. For example, for a spontaneously layer polarized state at filling factor ν=2, domain walls between regions of opposite polarization carry conducting edge modes. A microscopic analysis shows that lattice-scale interactions can favor such a layer polarized state.
UR - http://www.scopus.com/inward/record.url?scp=84929192675&partnerID=8YFLogxK
U2 - 10.1103/PhysRevB.91.165107
DO - 10.1103/PhysRevB.91.165107
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AN - SCOPUS:84929192675
SN - 1098-0121
VL - 91
JO - Physical Review B - Condensed Matter and Materials Physics
JF - Physical Review B - Condensed Matter and Materials Physics
IS - 16
M1 - 165107
ER -