Split-well resonant-phonon terahertz quantum cascade laser

Shiran Levy; Nathalie Lander Gower; Silvia Piperno; Sadhvikas J. Addamane; John L. Reno; Asaf Albo

doi:10.1364/OE.486446

Split-well resonant-phonon terahertz quantum cascade laser

Shiran Levy, Nathalie Lander Gower, Silvia Piperno, Sadhvikas J. Addamane, John L. Reno, Asaf Albo

United States Department of Energy

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

We present a highly diagonal “split-well resonant-phonon” (SWRP) active region design for GaAs/Al_0.3Ga_0.7As terahertz quantum cascade lasers (THz-QCLs). Negative differential resistance is observed at room temperature, which indicates the suppression of thermally activated leakage channels. The overlap between the doped region and the active level states is reduced relative to that of the split-well direct-phonon (SWDP) design. The energy gap between the lower laser level (LLL) and the injector is kept at 36 meV, enabling a fast depopulation of the LLL. Within this work, we investigated the temperature performance and potential of this structure.

Original language	English
Pages (from-to)	22274-22283
Number of pages	10
Journal	Optics Express
Volume	31
Issue number	14
DOIs	https://doi.org/10.1364/OE.486446
State	Published - 3 Jul 2023

Bibliographical note

Publisher Copyright:
© 2023 Optica Publishing Group under the terms of the Optica Open Access Publishing Agreement.

Funding

Acknowledgments. The authors would like to acknowledge the Israel Science Foundation (ISF) and the Israel Ministry of Science and Technology for their grants. The data of this research was taken at Massachusetts Institute of Technology (MIT). This work was performed, in part, at the Center for Integrated Nanotechnologies, an Office of Science User Facility operated for the U.S. Department of Energy (DOE) Office of Science. Sandia National Laboratories is a multimission laboratory managed and operated by National Technology & Engineering Solutions of Sandia, LLC, a wholly owned subsidiary of Honeywell International, Inc., for the U.S. DOE’s National Nuclear Security Administration under contract DE-NA-0003525. The views expressed in the article do not necessarily represent the views of the U.S. DOE or the United States Government.

Funders	Funder number
U.S. Department of Energy
Office of Science
National Nuclear Security Administration	DE-NA-0003525
Israel Science Foundation
Ministry of science and technology, Israel

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Cite this

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abstract = "We present a highly diagonal “split-well resonant-phonon” (SWRP) active region design for GaAs/Al0.3Ga0.7As terahertz quantum cascade lasers (THz-QCLs). Negative differential resistance is observed at room temperature, which indicates the suppression of thermally activated leakage channels. The overlap between the doped region and the active level states is reduced relative to that of the split-well direct-phonon (SWDP) design. The energy gap between the lower laser level (LLL) and the injector is kept at 36 meV, enabling a fast depopulation of the LLL. Within this work, we investigated the temperature performance and potential of this structure.",

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AU - Albo, Asaf

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Split-well resonant-phonon terahertz quantum cascade laser

Abstract

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