Abstract
We present a so-called "split-well direct-phonon" active region design for terahertz quantum cascade lasers (THz-QCLs). Lasers based on this scheme profit from both elimination of high-lying parasitic bound states and resonant-depopulation of the lower laser level. Negative differential resistance is observed at room temperature, which indicates that each module behaves as a clean 3-level system. We further use this design to investigate the impact of temperature on the dephasing time of GaAs/AlGaAs THz-QCLs.
Original language | English |
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Article number | 191102 |
Journal | Applied Physics Letters |
Volume | 114 |
Issue number | 19 |
DOIs | |
State | Published - 13 May 2019 |
Bibliographical note
Publisher Copyright:© 2019 Author(s).
Funding
A. Albo would like to acknowledge the Israel Science Foundation (ISF) for their Grant No. 1556/18 and the Bar-Ilan University for their generous Starting Grant for New Faculty Members. Y. V. Flores would like to acknowledge the Research Fellowship Program of the German Research Foundation, DFG under Grant No. FL945/1-1. This work was supported by NSF, NASA, Israel MoD, and ISF. This work was also performed, in part, at the Center for Integrated Nanotechnologies, an Office of Science User Facility operated for the U.S. Department of Energy (DOE) Office of Science. Sandia National Laboratories is a multi-mission laboratory managed and operated by National Technology and Engineering Solutions of Sandia, LLC., a wholly owned subsidiary of Honeywell International, Inc., for the U.S. Department of Energy’s National Nuclear Security Administration under Contract No. DE-NA-0003525.
Funders | Funder number |
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National Science Foundation | |
U.S. Department of Energy | |
National Aeronautics and Space Administration | |
Office of Science | |
National Nuclear Security Administration | |
Sandia National Laboratories | |
Deutsche Forschungsgemeinschaft | |
Bar-Ilan University | |
Israel Science Foundation | 1556/18 |