Spin and quantum interference effects in hopping conductivity

A. Frydman, Zvi Ovadyahu

Research output: Contribution to journalArticlepeer-review

43 Scopus citations

Abstract

We present results of high field magnetoconductance (MC) measurements on In2O3-x films in the hopping regime. For relatively weak disorder, a purely positive MC is observed. With growing disorder, the MC acquires a negative component that tends to saturate at high fields. The data for the latter case are consistent with the co-existence of two mechanisms for MC; an isotropic, spin-alignment mechanism and an anisotropic, quantum-interference one.

Original languageEnglish
Pages (from-to)745-749
Number of pages5
JournalSolid State Communications
Volume94
Issue number9
DOIs
StatePublished - Jun 1995
Externally publishedYes

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