Abstract
In this article, a spatial-dependent evaluation method is presented in order to visualize the changing behavior of several parameters such as temperature and electrical potential in semiconductor materials. If well-known experimental standard methods enable solid measurements and results, space-dependent simulations enable a good step-by-step follow-up of the mechanisms. The original combination of three complementary methods (analytical, numerical and experimental) is presented here as a whole package to extract the Seebeck coefficient of Germanium for small temperature variations above room temperature. An experimental negative temperature effect on the Seebeck coefficient for n-type Ge was successfully interpreted by the influence of minority carriers at low doping level, showing by the way some limitations of the analytical and numerical model.
| Original language | English |
|---|---|
| Article number | 152587 |
| Journal | Applied Surface Science |
| Volume | 585 |
| DOIs | |
| State | Published - 30 May 2022 |
Bibliographical note
Publisher Copyright:© 2022 Elsevier B.V.
Funding
A. Chelly wishes to warmly thank Prof. Moshe Sinvani from the Alexander Kofkin Faculty of Engineering at Bar Ilan University, for his precious technical assistance and discussion on the experimental setup and also his kind help with the thermal imaging camera.
| Funders | Funder number |
|---|---|
| Alexander Kofkin Faculty of Engineering at Bar Ilan University |
Keywords
- Diffusion of charged carriers
- Germanium
- Hot-Probe Method
- Numerical and Analytical analyses
- Seebeck coefficient
- Thermal distribution
- Thermoelectric effects