Abstract
As part of the sensitivity evaluation of a new sensor designed for Near-field Scanning Optical Microscopy (NSOM) and for detection of evanescent waves, advanced 2D simulations have been conducted: The photodetector device, shifted across a vertically oriented Gaussian beam, itself passing through a slit set on an opaque barrier, may collect the projected light on its top subwavelength aperture. The device is silicon Schottky nanoscale diode shaped as a truncated pyramid photodetector, and sharing a subwavelength slit aperture. Using Finite Elements Method (FEM) electro-optical simulations have been conducted. These results are promising towards the fabrication of a new generation of photodetector devices.
Original language | English |
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Title of host publication | 2018 IEEE International Conference on the Science of Electrical Engineering in Israel, ICSEE 2018 |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
ISBN (Electronic) | 9781538663783 |
DOIs | |
State | Published - 2 Jul 2018 |
Externally published | Yes |
Event | 2018 IEEE International Conference on the Science of Electrical Engineering in Israel, ICSEE 2018 - Eilat, Israel Duration: 12 Dec 2018 → 14 Dec 2018 |
Publication series
Name | 2018 IEEE International Conference on the Science of Electrical Engineering in Israel, ICSEE 2018 |
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Conference
Conference | 2018 IEEE International Conference on the Science of Electrical Engineering in Israel, ICSEE 2018 |
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Country/Territory | Israel |
City | Eilat |
Period | 12/12/18 → 14/12/18 |
Bibliographical note
Publisher Copyright:© 2018 IEEE.
Keywords
- 2D simulations
- FEM
- NSOM
- evanescent waves
- photodetector
- silicon
- slit sub-wavelength aperture